C4002

ST 2SC4002 NPN Silicon Triple Diffused Planar Transistor for High-Voltage Driver Applications. The transistor is subdivided into two groups, D and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.18g Absolute Maximum Ratings (T a = 25oC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP Ptot Tj TS G S P FORM A IS AVAILABLE Value 400 400 5 200 400 600 150 -55 to +150 Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: [email protected] Веб: www.rct.ru ® ST 2SC4002 Characteristics at Tamb=25 oC DC Current Gain at VCE=10V, IC=50mA Current Gain Group D E Collector Cutoff Current at VCB=300V Emitter Cutoff Current at VEB=4V Collector Emitter Saturation Voltage at IC=50mA, IB=5mA Base Emitter Saturation Voltage at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=30V, IC=10mA Symbol hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT Min. 60 100 - G S P FORM A IS AVAILABLE Typ. 70 Max. 120 200 0.1 0.1 0.6 1.0 - Unit - µA µA V V MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 ...