2SC4002 NPN Silicon Triple Diffused Planar Transistor
for High-Voltage Driver Applications.
The transistor is subdivided...
2SC4002
NPN Silicon Triple Diffused Planar
Transistor
for High-Voltage Driver Applications.
The
transistor is subdivided into two groups, D and E, according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
Absolute Maximum Ratings (Ta = 25oC)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Range
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.18g
Symbol VCBO VCEO VEBO IC ICP Ptot Tj TS
Value 400 400
5 200 400 600 150 -55 to +150
Unit V V V mA mA
mW OC OC
Page 1 of 2
7/15/2011
Characteristics at Tamb=25 oC
Parameter DC Current Gain
at VCE=10V, IC=50mA Current Gain Group D E
Collector Cutoff Current at VCB=300V
Emitter Cutoff Current at VEB=4V
Collector Emitter Saturation Voltage at IC=50mA, IB=5mA
Base Emitter Saturation Voltage at IC=50mA, IB=5mA
Gain Bandwidth Product at VCE=30V, IC=10mA
Symbol
hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT
Min.
60 100
-
Typ.
70
Max.
120 200 0.1 0.1 0.6 1.0
-
Unit μA μA
V
V
MHz
Page 2 of 2
7/15/2011
...
