Document
RU3205
N-Channel Advanced Power MOSFET
MOSFET
Features
• 60V/100A, • RDS (ON) =7.5mΩ(max.)@VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 175°C Operating Temperature • Lead Free and Green Devices Available
(RoHS Compliant)
Applications
• Switching Application Systems
Pin Description
TO-220
TO-220F
TO-263
TO-247
Absolute Maximum Ratings
N-Channel MOSFET
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings
EAS Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
Rating
60 ±25 175 -55 to 175 100
①
400 90 82 275 200 0.55
1.2
Unit
V °C °C A
A A
W °C/W
J
Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAR., 2009
www.ruichips.com
Downloaded from Elcodis.com electronic components distributor
RU3205
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU3205 Unit
Min. Typ. Max.
Static Characteristics BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
②
RDS(ON)
Drain-Source On-state Resistance
VGS=0V, IDS=250µA VDS= 60V, VGS=0V
TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=40A
60 2
V 1
µA 30 34V ±100 nA 7.5 mΩ
Diode Characteristics
②
VSD
Diode Forward Voltage
trr Reverse Recovery Time
qrr Reverse Recovery Charge
③
Dynamic Characteristics RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss td(ON)
tr
Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
③
Gate Charge Characteristics
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
ISD=20 A, VGS=0V
ISD=40A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 30V, Frequency=1.0MHz
VDD=35V, RL=35Ω, IDS= 1A, VGEN= 10V, RG=6Ω
VDS=60V, VGS= 10V, IDS=80A
0.83 50 110
1.2
V ns nC
1.4 3300 440 150
21 12 67 60
40 20 125 115
Ω pF
ns
75 105 18 nC 25
Notes: ①Current limited by Safe operating area.
②Pulse test ; Pulse width≤300µs, duty cycle≤2%. ③Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAR., 2009
2
Downloaded from Elcodis.com electronic components distributor
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Typical Characteristics
Power Dissipation
RU3205
Drain Current
ID - Drain Current (A)
Ptot - Power (W)
Tj - Junction Temperature (°C) Safe Operation Area
Tj - Junction Temperature (°C) Thermal Transient Impedance
Normalized Effective Transient
ID - Drain Current (A)
VDS - Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
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