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RU3205 Dataheets PDF



Part Number RU3205
Manufacturers Ruichips
Logo Ruichips
Description N-Channel Advanced Power MOSFET
Datasheet RU3205 DatasheetRU3205 Datasheet (PDF)

RU3205 N-Channel Advanced Power MOSFET MOSFET Features • 60V/100A, • RDS (ON) =7.5mΩ(max.)@VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching Application Systems Pin Description TO-220 TO-220F TO-263 TO-247 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted.

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RU3205 N-Channel Advanced Power MOSFET MOSFET Features • 60V/100A, • RDS (ON) =7.5mΩ(max.)@VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 175°C Operating Temperature • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching Application Systems Pin Description TO-220 TO-220F TO-263 TO-247 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Rating 60 ±25 175 -55 to 175 100 ① 400 90 82 275 200 0.55 1.2 Unit V °C °C A A A W °C/W J Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAR., 2009 www.ruichips.com Downloaded from Elcodis.com electronic components distributor RU3205 Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU3205 Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current ② RDS(ON) Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 60V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=40A 60 2 V 1 µA 30 34V ±100 nA 7.5 mΩ Diode Characteristics ② VSD Diode Forward Voltage trr Reverse Recovery Time qrr Reverse Recovery Charge ③ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss td(ON) tr Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time ③ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge ISD=20 A, VGS=0V ISD=40A, dlSD/dt=100A/µs VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 30V, Frequency=1.0MHz VDD=35V, RL=35Ω, IDS= 1A, VGEN= 10V, RG=6Ω VDS=60V, VGS= 10V, IDS=80A 0.83 50 110 1.2 V ns nC 1.4 3300 440 150 21 12 67 60 40 20 125 115 Ω pF ns 75 105 18 nC 25 Notes: ①Current limited by Safe operating area. ②Pulse test ; Pulse width≤300µs, duty cycle≤2%. ③Guaranteed by design, not subject to production testing. Copyright© Ruichips Semiconductor Co., Ltd Rev. A – MAR., 2009 2 Downloaded from Elcodis.com electronic components distributor www.ruichips.com Typical Characteristics Power Dissipation RU3205 Drain Current ID - Drain Current (A) Ptot - Power (W) Tj - Junction Temperature (°C) Safe Operation Area Tj - Junction Temperature (°C) Thermal Transient Impedance Normalized Effective Transient ID - Drain Current (A) VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec) Copyrig.


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