IXGQ28N120BD1

High Voltage IGBT with Diode IXGQ 28N120B IXGQ 28N120BD1 V CES IC25 VCE(sat) tfi(typ) = 1200 V = 50 A = 3.5 V = 160 ns Symbol Test Conditions VCES VCGR V GES VGEM IC25 IC110 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms V GE = 15 V, T J = 125°C, R G = 10 Ω Clamped inductive load PC TC = 25°C TJ TJM Tstg M Mounting torque d Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight D1 Maximum Ratings 1200 1200 V V ±20 V ±30 V 50 A 28 A 150 A I = 60 CM @0.8 VCES 250 A W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. 300 °C 6g TO-3P (IXGQ) G CE G = Gate E = Emitter (TAB) C = Collector TAB = Collector Features z International standard package z IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers z MOS Gate turn-on - drive simplicity z Fast Recovery Expitaxial Diode (FRED) - soft recovery with low I RM Symbol VGE(th) ICES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 250 µA, VCE = VGE 2.5 5.0 V VCE = VCES VGE = 0 V TJ = 25°C 28N120B 28N120BD1 25 µA 50 µA VCE = 0 V, VGE = ±20 V ±100 nA IC = 28A, VGE = 15 V Note 2 T=125°C 2.9 3.5 V 2.8 Advantages z Saves space (two devices in one package) z Easy to mount with 1 screw (isolated mounting screw hole) z Reduces assembly time and cost © 2003 IXYS All rights reserved DS9...