N-channel Power MOSFET
STD7N80K5, STP7N80K5, STU7N80K5
Datasheet
N-channel 800 V, 0.95 Ω typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and ...
Description
STD7N80K5, STP7N80K5, STU7N80K5
Datasheet
N-channel 800 V, 0.95 Ω typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages
TAB 3
DPAK 1
TAB
TAB
TO-220
1 23
IPAK
123
D(2, TAB)
G(1)
S(3)
AM01476v1_tab
Features
Order code
VDS
STD7N80K5
STP7N80K5
800 V
STU7N80K5
Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected
RDS(on) max
ID
1.2 Ω
6A
Applications
Switching applications
Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Product status link STD7N80K5 STP7N80K5 STU7N80K5
DS9173 - Rev 7 - September 2020 For further information contact your local STMicroelectronics sales office.
www.st.com
STD7N80K5, STP7N80K5, STU7N80K5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate- source voltage
ID
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM (1) Drain current (pulsed)
PTOT Total power dissipation at TC = 25 °C
IAR
Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax)
Single pulse avalanche energy
EAS
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)
dv/dt (2) Peak diode recovery vo...
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