STD4N52K3

STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3 N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet — production data Features Order codes VDSS RDS(on) max ID Pw STD4N52K3 STF4N52K3 STP4N52K3 STU4N52K3 525 V < 2.6 Ω 2.5 A 45 W 2.5 A 20 W (1) 2.5 A 45 W 2.5 A 45 W 1. Limited by package ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Application ■ Switching applications Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. 3 1 DPAK 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 IPAK Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Table 1. Device summary Order codes STD4N52K3 STF4N52K3 STP4N52K3 STU4N52K3 Marking 4N52K3 4N52K3 4N52K3 4N52K3 Package DPAK TO-220FP TO-220 IPAK Packaging Tape and reel Tube Tube Tube February 2013 This is information on a product in full production. Doc ID 18206 Rev 2 1/21 www.st.com 21 Contents Contents STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....