N-channel Power MOSFET
STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3
N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220F...
Description
STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3
N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet — production data
Features
Order codes
VDSS
RDS(on) max
ID
Pw
STD4N52K3 STF4N52K3 STP4N52K3 STU4N52K3
525 V
< 2.6 Ω
2.5 A 45 W 2.5 A 20 W
(1)
2.5 A 45 W 2.5 A 45 W
1. Limited by package
■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery
characteristics ■ Zener-protected
Application
■ Switching applications
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
3 1
DPAK
3 2 1
TO-220FP
3 2 1
TO-220
3 2 1
IPAK
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary Order codes STD4N52K3 STF4N52K3 STP4N52K3 STU4N52K3
Marking 4N52K3 4N52K3 4N52K3 4N52K3
Package DPAK
TO-220FP TO-220 IPAK
Packaging Tape and reel
Tube Tube Tube
February 2013
This is information on a product in full production.
Doc ID 18206 Rev 2
1/21
www.st.com
21
Contents
Contents
STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
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