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C2120 Dataheets PDF



Part Number C2120
Manufacturers SeCoS
Logo SeCoS
Description NPN Transistor
Datasheet C2120 DatasheetC2120 Datasheet (PDF)

Elektronische Bauelemente 2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High DC Current Gain Complementary to 2SA950 CLASSIFICATION OF hFE Product-Rank 2SC2120-O Range 100~200 2SC2120-Y 160~320 TO-92 GH J AD B K E CF 1Emitter 2Collector 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 .

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Elektronische Bauelemente 2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High DC Current Gain Complementary to 2SA950 CLASSIFICATION OF hFE Product-Rank 2SC2120-O Range 100~200 2SC2120-Y 160~320 TO-92 GH J AD B K E CF 1Emitter 2Collector 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 - 2.42 2.66 0.36 0.76 Collector 2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction, Storage Temperature VCBO VCEO VEBO IC PC RθJA TJ, TSTG 35 30 5 0.8 0.6 208 150, -55~150 3 Base 1 Emitter Unit V V V A W °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut – Off Current Collector Cut – Off Current Emitter Cut – Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter voltage Collector Output Capacitance Transition Frequency V(BR)CBO 35 - - V IC=0.1mA, IE=0 V(BR)CEO 30 - - V IC=10mA, IB=0 V(BR)EBO 5 - - V IE=0.1mA, IC=0 ICBO - - 0.1 µA VCB=35V, IE=0 ICEO - - 0.1 µA VCE=25V, IB=0 IEBO - - 0.1 µA VEB=5V, IC=0 hFE 100 - 320 VCE=1V, IC=100mA VCE(sat) - - 0.5 V IC=500mA, IB=20mA VBE - - 0.8 V VCE=1V, IC=10mA Cob - - 13 pF VCB=10V, IE=0, f=1MHz fT 100 - - MHz VCE=5V, IC=10mA http://www.SeCoSGmbH.com/ 28-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 2 Elektronische Bauelemente CHARACTERISTIC CURVES 2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor http://www.SeCoSGmbH.com/ 28-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 2 .



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