2SC2120

ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (T a = 25OC) Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS G S P FORM A IS AVAILABLE Value 35 30 5 800 160 600 150 -55 to +150 Unit V V V mA mA mW OC OC РАДИОТЕХ-ТРЕЙД Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: [email protected] Веб: www.rct.ru ® ST 2SC2120 Characteristics at Tamb=25 OC DC Current Gain at VCE=1V, IC=100mA Current Gain Group O Y at VCE=1V, IC=700mA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VEB=5V Collector Emitter Saturation Voltage at IC=500mA, IB=20mA Transition Frequency at VCE=5V, IC=10mA Base Emitter Voltage at IC=10mA, VCE=1V Collector Output Capacitance at VCB=10V, f=1MHz Collector Emitter Breakdown Voltage at IC=10mA Symbol hFE hFE hFE ICBO IEBO VCE(sat) fT VBE COB VCEO Min. 100 160 35 0.5 30 G S P FORM A IS AVAILABLE Typ. 120 13 - Max. 200 320 0.1 0.1 0.5 0.8 - Unit µA µA V MHz V pF V SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, acompany ® listed on the Hong Kong Stock Exchange, Stoc...