MwT-LN600

MwT-LN600 26 GHz Super Low Noise pHEMT Device May 2010 FEATURES 0.50 dB Minimum Noise Figure at 12 GHz 8.0 dB Associated Gain at 12 GHz 20.0 dBm P1dB at 12 GHz 0.15 Micron x 600 Micron Gate APPLICATIONS Excellent Choice for Super Low Noise Applications Ideal for Commercial, Military, Hi-Rel Space Applications DESCRIPTION The MwT- LN600 is a super low noise, quasi enhancement-mode pHEMT whose nominal 0.15 micron gate length and 600 micron gate width make it ideally suited for applications requiring very low noise and high associated gain up to 20 GHz. The device is equally effective for wideband (e.g. 6 to 18 GHz) and narrow-band applications. Each wafer can be screened to meet quality and reliability requirements of space and military applications. RF SPECIFICATIONS AT Ta = 25 C S YM BO L PARAMETERS & CONDITIONS FREQ UNITS MIN TYP NF min M inim um Noise Figure V ds= 2.5V Ids = 40 m A (V gs = 0) 4 GHz 12 GHz dB 0.2 0.5 SSG Associated Gain V ds= 2.5V Ids = 40 m A (V gs = 0) 4 GHz 12 GHz dB 11.0 8.0 12.0 9.0 P1dB Output P ower at 1dB Com pression V ds= 3.0V Ids = 100 m A 12 GHz dBm 20.0 Note: MWT-LN600 is a quas i enhanc ement mode dev ic e. For bes t nois e f igure, V gs bias v oltage s hould be s et at either 0 or s lightly pos itiv e v oltages to ac hiev e the target operating c urrent. DC SPECIFICATIONS AT Ta = 25 C S YM BO L Im a x Gm Vp BVGSO BVGDO PARAMETERS & CONDITIONS M axim um Current Vds = 2.5V Vgs = 0.6V Trans c onduc tanc e Vds = 2.5V...