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AP07SL60H-A

Advanced Power Electronics

N-Channel MOSFET

Advanced Power Electronics Corp. AP07SL60H-A Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Switc...


Advanced Power Electronics

AP07SL60H-A

File Download Download AP07SL60H-A Datasheet


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Advanced Power Electronics Corp. AP07SL60H-A Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free G D S Description AP07SL60 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. VDS @ Tj,max. RDS(ON) ID 700V 0.6Ω 7A G D S TO-252(H) . Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 650 V VGS ID@TC=25℃ ID@TC=100℃ IDM Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 +20 V 7A 4.4 A 18 A PD@TC=25℃ PD@TA=25℃ EAS Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy5 62.5 W 2W 5 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Value 2 62.5 Units ℃/W ℃/W Data & specifications subject to change without notice 1 201408201 AP07SL60H-A Electrical Characteristics@Tj...




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