AOL1202

AOL1202 30V N-Channel MOSFET General Description The AOL1202 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 54A < 4.2mΩ < 6mΩ UltraSO-8TM Top View Bottom View D D G S S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 54 42 200 16 13 38 72 58 29 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 20 50 2.1 Max 25 60 2.6 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0 : December 2009 www.aosmd.com Page 1 of 6 AOL1202 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ ...