D879

Ordering number:EN550F NPN Epitaxial Planar Silicon Transistor 2SD879 1.5V, 3V Strobe Applications Features · In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. · The charge time is approximately 1 second faster than that of germanium transistors. · Less power dissipation because of low Collector-toEmitter Voltage VCE(sat), permitting more flashes of light to be emitted. · Small package and large allowable collector dissipation (TO-92, PC=750mW). · Large current capacity and highly resistant to breakdown. · Excellent linearity of hFE in the region from low current to high current. Specifications Package Dimensions unit:mm 2003B [2SD879] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 1.3 1.3 0.44 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-92 EIAJ : SC-43 SANYO : NP Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEX VCEO VEBO IC ICP PC Tj Tstg 100ms single pulse Conditions Ratings 30 20 10 6 3 5 750 150 –55 to +150 Unit V V V V A A mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE fT Cob VCE(sat) VCB=20V, IE=0 VEB=4V, IC=0 VCE=2V, IC=3A (...