2SC3623A

DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) PT Tj Tstg Ratings 2SC3623 2SC3623A 60 50 12 15 150 250 150 −55 to +150 Unit V V V mA mW °C °C PACKAGE DRAWING (UNIT: mm) Electrode connection 1. Emitter (E) 2. Collector (C) 3. Base (B) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13521EJ4V0DS00 Date Published April 2002 N CP(K) Printed in Japan © 21090928 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Symbol Conditions Collector cutoff current ICBO VCB = 50 V, IE = 0 Emitter cutoff current IEBO VEB = 10 V, IC = 0 DC current gain hFE1 VCE = 5.0 V, IC = 1.0 mA* DC current gain hFE2 VCE = 5.0 V, IC = 100 mA* DC base voltage VBE VCE = 5.0 V, IC = 1.0 mA* Collector saturation voltage VCE(sat) IC = 50 mA, IB = ...