Power Transistors
2SD1964
Silicon NPN epitaxial planar type
For power switching
s Features
q Low collector to emitter...
Power
Transistors
2SD1964
Silicon
NPN epitaxial planar type
For power switching
s Features
q Low collector to emitter saturation voltage VCE(sat) q Satisfactory linearity of foward current transfer ratio hFE q Large collector current IC q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC
130 80 7 25 15 50 2
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V A A
W
˚C ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current Emitter cutoff current Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
ICBO IEBO VCEO hFE1 hFE2* hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf
VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A VCE = 2V, IC = 8A IC = 7A, IB = 0.35A IC = 15A, IB = 1.5A IC = 7A, IB = 0.35A IC = 15A, IB = 1.5A VCE = 10V, IC = 0.5A, f = 1MHz
IC = 7A, IB1 = 0.7A, IB2 = – 0.7A, VCC = 50V
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
14.0±0.5 Solder Dip 4.0
16.7±0.3 7.5±0.2
0.7±0.1
10.0±0.2 5.5±0.2
Unit: ...
