IRLML6344TRPbF

VDS VGS Max RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) 30 ± 12 29 37 Application(s) Load/ System Switch V V mΩ mΩ G1 S2 Features and Benefits Low RDSon (<29mΩ) Industry-standard SOT-23 Package RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer Qualification IRLML6344TRPbF HEXFET® Power MOSFET 3D Micro3TM (SOT-23) IRLML6344TRPbF results in Benefits Lower Conduction Losses Multi-vendor compatibility Environmentally friendly Increased Reliability Base Part Number IRLML6344TRPbF Package Type Micro3™(SOT-23) Standard Pack Form Quantity Tape and Reel 3000 Orderable Part Number IRLML6344TRPbF Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation PD @TA = 70°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ, TSTG Junction and Storage Temperature Range Max. 30 5.0 4.0 25 1.3 0.8 0.01 ± 12 -55 to + 150 Units V A W W/°C V °C Thermal Resistance Symbol Parameter eRθJA Junction-to-Ambient fRθJA Junction-to-Ambient (t<10s) Typ. ––– ––– ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Max. 100 99 Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 19, 2014 IRLML6344TRPbF Electric Characteristics @ TJ = 25°C ...