IRLML6346TRPbF

VDS VGS Max RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) 30 V ± 12 V 63 m 80 m PD - 97584A IRLML6346TRPbF HEXFET® Power MOSFET * 6 ' Micro3TM (SOT-23) IRLML6346TRPbF Application(s) Load/ System Switch Features and Benefits Features Industry-standard SOT-23 Package RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer Qualification Öresults in Benefits Multi-vendor compatibility Environmentally friendly Increased Reliability Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TA = 25°C Maximum Power Dissipation PD @TA = 70°C Maximum Power Dissipation VGS TJ, TSTG Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance Symbol Parameter eRJA Junction-to-Ambient fRJA Junction-to-Ambient (t<10s) Max. 30 3.4 2.7 17 1.3 0.8 0.01 ± 12 -55 to + 150 Typ. ––– ––– Max. 100 99 Units V A W W/°C V °C Units °C/W ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes  through „ are on page 10 www.irf.com 1 03/09/12 IRLML6346TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250μA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficie...