2SK3984

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3984 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3984 is N-channel MOS Field Effect Transistor designed for high speed switching applications such as class-D amplifier. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3984-ZK TO-252 (MP-3ZK) FEATURES Super low on-state resistance RDS(on) = 71 mΩ TYP. (VGS = 10 V, ID = 9 A) RDS(on) = 85 mΩ MAX. (VGS = 10 V, ID = 9 A) Low Ciss: Ciss = 750 pF TYP. (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 100 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ±18 A ID(pulse) ±45 A Total Power Dissipation (TC = 25°C) PT1 30 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Single Avalanche Energy Note2 Repetitive Avalanche Current Note3 Repetitive Avalanche Energy Note3 Tstg −55 to +150 °C EAS 10 mJ IAR 10 A EAR 10 mJ THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) Channel to Ambient Thermal Resistance Rth(ch-A) 125 4.17 °C/W °C/W Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH 3. Tch(peak) ≤ 150°C, RG = 25 Ω The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Pl...