J654

Ordering number : ENN7537 Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. 2SJ654 P-Channl Silicon MOSFET 2SJ654 DC / DC Converter Applications Package Dimensions unit : mm 2063A 10.0 3.2 [2SJ654] 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications Absolute Maximum Ratings at Ta=25°C 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Tc=25°C Ratings --100 ±20 --8 --32 2.0 20 150 --55 to +150 Unit V V A A W W °C °C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Marking : J654 Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) yfs ID=--1mA, VGS=0 VDS=--100V, VGS=0 VGS=±16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--4A min --100 --1.2 4 Ratings typ max Unit V --1 µA ±10 µA --2.6 V 6S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious phy...