J348

Ordering number:ENN6421 Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. P-Channel Silicon MOSFET 2SJ348 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2052C [2SJ348] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25˚C 2.55 Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) ID=–1mA, VGS=0 IG=±100µA, VDS=0 VDS=–60V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–15A ID=–15A, VGS=–10V ID=–15A, VGS=–4V 2.55 0.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220 Ratings –60 ±20 –30 –120 1.75 70 150 –55 to +150 Unit V V A A W W ˚C ˚C Ratings min typ max Unit –60 V ±20 V –100 µA ±10 µA –1.0 –2.0 V 15 25 S 30 40 mΩ 40 55 mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, su...