C1515K

2SC1515(K) Silicon NPN Triple Diffused Application High voltage switching Outline TO-92 (1) 3 2 1 1. Emitter 2. Collector 3. Base 2SC1515 (K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO IC PC Tj Tstg Ratings 200 200 150 5 50 200 150 –55 to +150 Unit V V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to emitter breakdown V(BR)CES voltage 200 Emitter to base breakdown voltage V(BR)CEO V(BR)EBO 150 5 Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage I CBO hFE VCE(sat) — 30 — Base to emitter saturation voltage VBE(sat) — Gain bandwidth product Collector output capacitance fT Cob 60 — Typ — — — — — — — — — Max — Unit V Test conditions IC = 10 µA, RBE = 0 —V —V IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 0.1 µA 300 1.0 V VCB = 20 V, IE = 0 VCE = 6 V, IC = 10 mA IC = 10 mA, IB = 1 mA 1.5 V IC = 10 mA, IB = 1 mA — MHz VCE = 6 V, IC = 10 mA 10 pF VCB = 6 V, IE = 0, f = 1 MHz 2 Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 300 200 100 0 50 100 150 Ambient Temperature Ta (°C) 1,000 Collector Cutoff Current vs. Ambient Temperature VCB = 20 V 100 10 1.0 0.1 0 40 80 120 160 200 Ambient Temperature Ta (°C) DC Current Transfer hFE Collector Current IC (mA) 2SC1...