SBB1089Z CASCADABLE Datasheet

SBB1089Z Datasheet, PDF, Equivalent


Part Number

SBB1089Z

Description

CASCADABLE

Manufacture

RFMD

Total Page 8 Pages
Datasheet
Download SBB1089Z Datasheet


SBB1089Z
SBB1089Z
50MHz to 850MHz,
CASCADABLE
Package: SOT-89
Product Description
RFMD’s SBB1089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. Designed to run directly from a 5V supply, the SBB1089Z does
not require a dropping resistor as compared to typical Darlington amplifi-
ers. The SBB1089Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain and Return Loss versus Frequency
(w/ App. Ckt.)
35
25
S21
S11
S21
S22
15
5
-5
S11
-15
-25
-35
50
S22
150 250 350 450 550 650 750 850
Frequency (MHz)
Features
OIP3=43.1dBm at 240MHz
P1dB=19.6dBm at 500MHz
Single Fixed 5V Supply
Robust 1000V ESD, Class 1C
Patented Thermal Design and
Bias Circuit
Low Thermal Resistance
Applications
Receiver IF Amplifier
Cellular, PCS, GSM, UMTS
Wireless Data, Satellite
Terminals
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
15.5
dB 70MHz
14.0
15.5
17.0 dB 240MHz
14.0
15.5
17.0 dB 400MHz
Output Power at 1dB Compression
19.0
dBm
70 MHz
19.0
dBm
240 MHz
18.0
19.0
dBm
400 MHz
Third Order Intercept Point
42.0
dBm
70 MHz
43.0
dBm
240 MHz
38.5
40.5
dBm
400 MHz
Return Loss
50 to 850
MHz Minimum 10dB
Input Return Loss
14.0
18.0
dB 70MHz to 5000MHz
Output Return Loss
12.0
16.0
dB 70MHz to 5000MHz
Noise Figure
3.5 4.2 dB 500MHz
Reverse Isolation
18.0
dB 70MHz to 5000MHz
Thermal Resistance
48.8
°C/W
junction - lead
Device Operating Voltage
5.0 5.3 V
Device Operating Current
82.0
90.0
98.0
mA
Test Conditions: VD=5V, ID=90mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=50, Tested with Bias Tees
DS130717
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 8

SBB1089Z
SBB1089Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ID)
Device Voltage (VD)
RF Input Power
110 mA
5.5 V
24 dBm
Junction Temp (TJ)
Operating Temp Range (TL)
Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Power Dissipation
0.61
W
ESD Rating - Human Body Model
(HBM)
Class 1C
Moisture Sensitivity Level
MSL2
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical RF Performance at Key Operating Frequencies (With 240MHz Application Circuit)
Parameter
Unit 50MHz 70MHz 100 240
400
MHz MHz MHz
Small Signal Gain, S21
Output Third Order Intercept Point, OIP3
Output Power at 1dB Compression, P1dB
Input Return Loss, S11
Output Return Loss, S22
Reverse Isolation, S12
Noise Figure, NF
dB
dBm
dBm
dB
dB
dB
dB
16.0
41.5
19.0
13.0
18.0
18.0
3.5
15.5
42.0
19.0
16.0
20.0
18.0
3.3
15.5
43.0
19.0
17.0
21.0
18.0
3.2
15.5
43.0
19.0
19.0
23.0
18.0
3.1
15.5
41.0
19.0
19.0
24.0
18.0
3.2
Test Conditions: VCC=5V ID=90mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=0dBm TL=25°C ZS=ZL=50
500
MHz
15.5
40.0
19.0
18.0
23.0
18.0
3.2
850
MHz
15.0
35.0
18.0
15.0
17.0
18.0
3.4
2 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS130717


Features SBB1089Z 50MHz to 850MHz, CASCADABLE Pac kage: SOT-89 Product Description RFMD ’s SBB1089Z is a high performance InG aP HBT MMIC amplifier utilizing a Darli ngton configuration with an active bias network. The active bias network provi des stable current over temperature and process Beta variations. Designed to r un directly from a 5V supply, the SBB10 89Z does not require a dropping resisto r as compared to typical Darlington amp lifiers. The SBB1089Z product is design ed for high linearity 5V gain block app lications that require small size and m inimal external components. It is inter nally matched to 50. Optimum Techno logy Matching® Applied GaAs HBT GaAs M ESFET  InGaP HBT SiGe BiCMOS Si BiCM OS SiGe HBT GaAs pHEMT Si CMOS Si BJT G aN HEMT InP HBT RF MEMS LDMOS dB Gain and Return Loss versus Frequency (w/ App. Ckt.) 35 25 S21 S11 S21 S22 15 5 -5 S11 -15 -25 -35 50 S22 150 250 350 450 550 650 750 850 Frequency (MHz ) Features  OIP3=43.1dBm at 240MHz  P1dB=19.6dBm at 500MHz  Single.
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