SGA6489Z MMIC AMPLIFIER Datasheet

SGA6489Z Datasheet, PDF, Equivalent


Part Number

SGA6489Z

Description

CASCADABLE SiGe HBT MMIC AMPLIFIER

Manufacture

RFMD

Total Page 6 Pages
Datasheet
Download SGA6489Z Datasheet


SGA6489Z
SGA6489ZLow
Noise, High
Gain SiGe HBT
SGA6489Z
DC to 3500MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-89
Product Description
The SGA6489Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain & Return Loss vs. Frequency
VD= 5.1 V, ID= 75 mA (Typ.)
24
GAIN
18
ORL
12
IRL
6
0
01234
Frequency (GHz)
0
-10
-20
-30
-40
5
Features
High Gain: 17.5dB at
1950 MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
18.4
20.1
22.4
dB 850MHz
17.5 dB 1950MHz
16.5
dB 2400MHz
Output Power at 1dB Compression
20.7
dBm
850 MHz
18.7
dBm
1950 MHz
Output Third Intercept Point
34.0
dBm
850 MHz
32.0
dBm
1950 MHz
Bandwidth Determined by Return
Loss
3500
MHz >10dB
Input Return Loss
14.4
dB 1950MHz
Output Return Loss
10.9 dB 1950MHz
Noise Figure
3.0 dB 1950MHz
Device Operating Voltage
4.7 5.1 5.5 V
Device Operating Current
67 75 83 mA
Thermal Resistance
(Junction - Lead)
97 °C/W
Test Conditions: VS=8V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=39, TL=25°C, ZS=ZL=50
DS111014
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6

SGA6489Z
SGA6489Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power
150 mA
7V
+18 dBm
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Moisture Sensitivity Level
MSL 2
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies
Parameter
Unit 100 500 850 1950
MHz MHz MHz MHz
Small Signal Gain
dB
21.0
20.8
20.1
17.5
Output Third Order Intercept Point
dBm 35.0 34.5 34.0 32.0
Output Power at 1dB Compression
dBm 20.6 20.9 20.7 18.7
Input Return Loss
dB
29.4
30.8
24.7
14.4
Output Return Loss
dB 18.7 16.3 14.6 10.9
Reverse Isolation
dB
23.9
23.8
23.9
22.2
Noise Figure
dB 3.2 2.8 2.7 3.0
Test Conditions: VS=8V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=39, TL=25°C, ZS=ZL=50
2400
MHz
16.5
30.1
17.4
12.5
10.9
21.4
3.4
3500
MHz
14.0
25.0
14.0
10.8
10.0
19.3
4.4
OIP3 vs. Frequency
VD= 5.1 V, ID= 75 mA
40
P1dB vs. Frequency
VD= 5.1 V, ID= 75 mA
22
36 20
32 18
28
+25°C
24
T
L
-40°C
+85°C
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
16
+25°C
14 TL -40°C
+85°C
12
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
Noise Figure vs. Frequency
VD=5.1 V, ID= 75 mA
5
4
3
2
TL=+25ºC
1
0
01234
Frequency (GHz)
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111014


Features SGA6489ZLow Noise, High Gain SiGe HBT S GA6489Z DC to 3500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 P roduct Description The SGA6489Z is a hi gh performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring o ne-micron emitters provides high FT and excellent thermal performance. The het erojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junc tion non-linearities results in higher suppression of intermodulation products . Only two DC-blocking capacitors, a bi as resistor, and an optional RF choke a re required for operation. Gain (dB) R eturn Loss (dB) Optimum Technology Mat ching® Applied GaAs HBT GaAs MESFET In GaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Gain & Return Lo ss vs. Frequency VD= 5.1 V, ID= 75 mA ( Typ.) 24 GAIN 18 ORL 12 IRL 6 0 01234 F requency (GHz) 0 -10 -20 -30 -40 5 Fe atures  High Gain: 17.5dB at 1950 MHz  Cascadable 50  Operates.
Keywords SGA6489Z, datasheet, pdf, RFMD, CASCADABLE, SiGe, HBT, MMIC, AMPLIFIER, GA6489Z, A6489Z, 6489Z, SGA6489, SGA648, SGA64, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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