SiGe HBT. SGA6589Z Datasheet


SGA6589Z HBT. Datasheet pdf. Equivalent


SGA6589Z


HIGH GAIN SiGe HBT
SGA6589ZDC to 3500MHz, Cascadable Low Noise, High Gain SiGe HBT

SGA6589Z

DC to 3500MHz, CASCADABLE LOW NOISE, HIGH GAIN SiGe HBT

Package: SOT-89

Product Description
The SGA6589Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.

Gain (dB) Return Loss (dB)

Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS
 SiGe HBT
GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS

Gain & Return Loss vs. Frequency
VD= 4.9 V, ID= 80 mA (Typ.) 32
GAIN 24
IRL ORL
16
8
0 01234 Frequency (GHz)

0 -10 -20 -30 -40 5

Features
 High Gain: 20dB at 1950MHz  Cascadable 50  Operates from Single Supply  Low Thermal Resistance
Package
Applications
 PA Driver Amplifier  Cellular, PCS, GSM, UMTS  IF Amplifier  Wireless Data, Satellite

Parameter

Specification Min. Typ. Max.

Unit

Condition

Small Signal Gain

23.0

25.5

28.1 dB 850MHz

20.0

dB 1950MHz

18.2

dB 2400MHz

Output Power at 1dB Compression

21.5

dBm

850 MHz

19.0

dBm

1950 MHz...



SGA6589Z
SGA6589ZDC
to 3500MHz,
Cascadable
Low Noise,
High Gain SiGe
HBT
SGA6589Z
DC to 3500MHz, CASCADABLE LOW NOISE,
HIGH GAIN SiGe HBT
Package: SOT-89
Product Description
The SGA6589Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain & Return Loss vs. Frequency
VD= 4.9 V, ID= 80 mA (Typ.)
32
GAIN
24
IRL
ORL
16
8
0
01234
Frequency (GHz)
0
-10
-20
-30
-40
5
Features
High Gain: 20dB at 1950MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
23.0
25.5
28.1 dB 850MHz
20.0
dB 1950MHz
18.2
dB 2400MHz
Output Power at 1dB Compression
21.5
dBm
850 MHz
19.0
dBm
1950 MHz
Output Third Intercept Point
32.5
dBm
850 MHz
32.0
dBm
1950 MHz
Bandwidth Determined by Return
Loss
4000
MHz >9dB
Input Return Loss
13.1 dB 1950MHz
Output Return Loss
9.2 dB 1950MHz
Noise Figure
3.0 dB 1950MHz
Device Operating Voltage
4.5 4.9 5.3 V
Device Operating Current
72 80 88 mA
Thermal Resistance
(Junction - Lead)
97 °C/W
Test Conditions: VS=8V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=39, TL=25°C, ZS=ZL=50
DS111014
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6

SGA6589Z
SGA6589Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power
160 mA
7V
+16 dBm
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Moisture Sensitivity Level
MSL 2
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies
Parameter
Unit 100 500 850 1950
MHz MHz MHz MHz
Small Signal Gain
dB 28.4 27.1 25.2 19.8
Output Third Order Intercept Point
dBm
32.1 32.5 32.0
Output Power at 1dB Compression
dBm
21.6 21.5 19.0
Input Return Loss
dB
13.9
15.0
15.6
13.1
Output Return Loss
dB
16.1 13.5 11.4
9.2
Reverse Isolation
dB
30.3
29.8
28.7
24.3
Noise Figure
dB 2.5 2.5 2.9
Test Conditions: VS=8V, ID=80mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=39, TL=25°C, ZS=ZL=50
2400
MHz
18.2
30.3
17.8
12.4
9.4
23.1
3.3
3500
MHz
15.1
11.4
10.6
19.2
OIP3 vs. Frequency
VD= 4.9 V, ID= 80 mA
40
35
30
25
TL=+25ºC
20
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
24
22
20
18
16
14
0
P1dB vs. Frequency
VD= 4.9 V, ID= 80 mA
TL=+25ºC
0.5 1 1.5 2 2.5 3
Frequency (GHz)
Noise Figure vs. Frequency
VD=4.9 V, ID= 80 mA
5
4
3
2
TL=+25ºC
1
0
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111014




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