SGA5586Z MMIC AMPLIFIER Datasheet

SGA5586Z Datasheet, PDF, Equivalent


Part Number

SGA5586Z

Description

CASCADABLE SiGe HBT MMIC AMPLIFIER

Manufacture

RFMD

Total Page 6 Pages
Datasheet
Download SGA5586Z Datasheet


SGA5586Z
SGA5586ZDC
to 4000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA5586Z
DC to 4000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA5586Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Frequency
24 VD= 3.3 V, ID= 60 mA (Typ.)
GAIN
18
ORL
12
IRL
6
0
012345
Frequency (GHz)
0
-10
-20
-30
-40
6
Features
High Gain: 18.7dB at
1950 MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
23.1
dB 850MHz
18.7
dB 1950MHz
17.3 dB 2400MHz
Output Power at 1dB Compression
18.1
dBm
850 MHz
15.8
dBm
1950 MHz
Output Third Intercept Point
31.6
dBm
850 MHz
28.8
dBm
1950 MHz
Bandwidth Determined by Return
Loss
4000
MHz >10dB
Input Return Loss
12.2
dB 1950MHz
Output Return Loss
20.7
dB 1950MHz
Noise Figure
2.6 dB 1950MHz
Device Operating Voltage
3.5 3.9 4.2 V
Device Operating Current
54 60 66 mA
Thermal Resistance
(Junction - Lead)
97 °C/W
Test Conditions: VS=8V, ID=60mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=68Ω, TL=25°C, ZS=ZL=50Ω
DS100916
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6

SGA5586Z
SGA5586Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power
120 mA
6V
+16 dBm
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies
Parameter
Unit 100 500 850 1950
MHz MHz MHz MHz
Small Signal Gain
dB 26.0 24.7 23.1 18.7
Output Third Order Intercept Point
dBm
31.5 31.6 28.8
Output Power at 1dB Compression
dBm
18.3
18.1
15.8
Input Return Loss
dB
22.3
13.9
11.8
12.2
Output Return Loss
dB
19.8
18.6
18.8
20.7
Reverse Isolation
dB 27.7 27.4 27.0 23.4
Noise Figure
dB 2.5 2.5 2.6
Test Conditions: VS=8V, ID=60mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=75Ω, TL=25°C, ZS=ZL=50Ω
2400
MHz
17.3
27.1
14.4
12.3
17.5
21.5
3.0
OIP vs. Frequency
3
VD= 3.9 V, ID= 60 mA
35
P1dB vs. Frequency
VD= 3.9 V, ID= 60 mA
20
3500
MHz
14.8
10.6
14.2
17.5
30
25
20
TL=+25ºC
15
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
18
16
14
12
TL=+25ºC
10
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
Noise Figure vs. Frequency
VD= 3.9 V, ID= 60 mA
5
4
3
2
1
0 TL=+25ºC
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100916


Features SGA5586ZDC to 4000MHz, Cascadable SiGe H BT MMIC Amplifier SGA5586Z DC to 4000 MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The SGA5586Z is a high performance SiGe HBT MMIC Amplifier. A Darlington confi guration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increas es breakdown voltage and minimizes leak age current between junctions. Cancella tion of emitter junction non-linearitie s results in higher suppression of inte rmodulation products. Only two DC-block ing capacitors, a bias resistor, and an optional RF choke are required for ope ration. Gain (dB) Return Loss (dB) Op timum Technology Matching® Applied GaA s HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si C MOS Si BJT GaN HEMT RF MEMS Gain & Ret urn Loss vs. Frequency 24 VD= 3.3 V, ID = 60 mA (Typ.) GAIN 18 ORL 12 IRL 6 0 0 12345 Frequency (GHz) 0 -10 -20 -30 -4 0 6 Features  High Gain: 18.7dB at 1950 MHz  Cascadable 50Ω  O.
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