SGA6289Z MMIC AMPLIFIER Datasheet

SGA6289Z Datasheet, PDF, Equivalent


Part Number

SGA6289Z

Description

CASCADABLE SiGe HBT MMIC AMPLIFIER

Manufacture

RFMD

Total Page 6 Pages
Datasheet
Download SGA6289Z Datasheet


SGA6289Z
SGA6289ZDC
to 4500MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA6289Z
DC to 4500MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-89
Product Description
The SGA6289Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain & Return Loss vs. Frequency
20
15 GAIN
IRL
10
ORL
5
0
01234
Frequency (GHz)
0
-10
-20
-30
-40
5
Features
Broadband Operation: DC to
4500 MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
12.3
13.9
15.1 dB 850MHz
12.6
dB 1950MHz
12.2
dB 2400MHz
Output Power at 1dB Compression
18.1
dBm
850 MHz
17.8
dBm
1950 MHz
Output Third Intercept Point
34.4
dBm
850 MHz
32.0
dBm
1950 MHz
Bandwidth Determined by Return
Loss
4500
MHz >10dB
Input Return Loss
18.5
dB 1950MHz
Output Return Loss
13.1 dB 1950MHz
Noise Figure
4.0 dB 1950MHz
Device Operating Voltage
3.6 4.0 4.4 V
Device Operating Current
67 75 83 mA
Thermal Resistance
(Junction - Lead)
97 °C/W
Test Conditions: VS=8V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=51, TL=25°C, ZS=ZL=50
DS111014
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6

SGA6289Z
SGA6289Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power
150 mA
6V
+18 dBm
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Moisture Sensitivity Level
MSL 2
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies
Parameter
Unit 100 500 850 1950
MHz MHz MHz MHz
Small Signal Gain
dB
13.5
14.0
13.9
12.6
Output Third Order Intercept Point
dBm 36.0 35.0 34.4 32.0
Output Power at 1dB Compression
dBm 18.7 18.6 18.1 17.8
Input Return Loss
dB
20.8
19.5
19.3
18.5
Output Return Loss
dB
32.8
25.6
20.6
13.1
Reverse Isolation
dB 17.4 18.6 18.9 19.2
Noise Figure
dB 3.9 3.8 3.7 4.0
Test Conditions: VS=8V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=51, TL=25°C, ZS=ZL=50
2400
MHz
12.2
31.2
17.1
17.9
12.2
19.1
4.6
3500
MHz
10.6
28.2
15.6
14.7
12.6
18.1
5.1
OIP vs. Frequency
3
VD= 4.0 V, ID= 75 mA
40
+25°C
36 TL -40°C
+85°C
32
P vs. Frequency
1dB
VD= 4.0 V, ID= 75 mA
20
18
16
28
24
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
14
+25°C
12 T -40°C
L
+85°C
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
Noise Figure vs. Frequency
VD= 4.0 V, ID= 75 mA
7
6
5
4
TL=+25ºC
3
2
012345
Frequency (GHz)
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111014


Features SGA6289ZDC to 4500MHz, Cascadable SiGe H BT MMIC Amplifier SGA6289Z DC to 4500 MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Product Description The SGA6289Z is a high performance SiGe HBT MMIC Amplifier. A Darlington confi guration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increas es breakdown voltage and minimizes leak age current between junctions. Cancella tion of emitter junction non-linearitie s results in higher suppression of inte rmodulation products. Only two DC-block ing capacitors, a bias resistor, and an optional RF choke are required for ope ration. Gain (dB) Return Loss (dB) Op timum Technology Matching® Applied GaA s HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si C MOS Si BJT GaN HEMT InP HBT RF MEMS LDM OS Gain & Return Loss vs. Frequency 20 15 GAIN IRL 10 ORL 5 0 01234 Frequency (GHz) 0 -10 -20 -30 -40 5 Features Broadband Operation: DC to 4500 MHz  Cascadable 50  Operates f.
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