SGA0363Z GAIN BLOCK Datasheet

SGA0363Z Datasheet, PDF, Equivalent


Part Number

SGA0363Z

Description

SILICON GERMANIUM CASCADABLE GAIN BLOCK

Manufacture

RFMD

Total Page 6 Pages
Datasheet
Download SGA0363Z Datasheet


SGA0363Z
SGA0363ZDC
to 5000MHz,
Silicon Germa-
nium Cascad-
able Gain
Block
SGA0363Z
DC to 5000MHz, SILICON GERMANIUM
CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
The SGA0363Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal perfomance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Small Signal Gain vs. Frequency
25
20
15
10
5
0
0123456
Frequency GHz
Features
DC to 5000MHz Operation
Single Voltage Supply
Low Current Draw: 11mA at
2.5V Typ.
High Output Intercept:
14dBm Typ. at 1950MHz
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Output Power at 1dB Compression
2.3
dBm
850 MHz
2.3
dBm
1950 MHz
1.6
dBm
2400 MHz
Third Order Intercept Point
14.2
dBm
850 MHz
14.0
dBm
1950 MHz
13.1
dBm
2400 MHz
Small Signal Gain
19.6
dB 850MHz
17.2 dB 1950MHz
16.2
dB 2400MHz
3dB Bandwidth
5000
MHz
Input VSWR
1.8:1
DC to 4500MHz
Output VSWR
1.7:1
DC to 4500MHz
Reverse Isolation
24.0 dB 850MHz
22.8
dB 1950MHz
22.1
dB 2400MHz
Noise Figure[1]
3.0 dB 1950MHz
Device Operating Voltage
2.5 V
Device Operating Current
9 11 13 mA
Thermal Resistance
255
°C/W
junction - lead
Test Conditions: VS=5V, ID=11mA Typ., TL=25°C. OIP3 Tone Spacing=1MHz, POUT per tone=-12dBm, RBIAS=220, ZS=ZL=50
DS111011
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6

SGA0363Z
SGA0363Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ID)
Device Voltage (VD)
RF Input Power
22 mA
6V
-5 dBm
Junction Temp (TJ)
Operating Temp Range (TL)
Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Parameter
Gain
Output IP3
Min.
Specification
Typ.
20.4
20.0
19.6
17.2
16.2
13.8
14.8
14.5
14.2
14.0
13.1
11.5
Output P1dB
Input Return Loss
Reverse Isolation
Noise Figure
Test Conditions: ID=8mA, unless otherwise noted
3.2
2.9
2.3
2.3
1.6
0.8
9.3
9.4
9.4
10.4
10.8
11.3
23.9
23.9
24.0
22.8
22.1
20.1
2.9
2.8
3.0
3.0
Max.
Unit
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
Condition
100 MHz
500 MHz
850 MHz
1950 MHz
2400 MHz
3500 MHz
100MHz, Tone spacing=1MHz, POUT per tone=
-12 dBm
500MHz, Tone spacing=1MHz, POUT per tone=
-12 dBm
850MHz, Tone spacing=1MHz, POUT per tone=
-12 dBm
1950MHz, Tone spacing=1MHz, POUT per tone=
-12 dBm
2400MHz, Tone spacing=1MHz, POUT per tone=
-12 dBm
3500MHz, Tone spacing=1MHz, POUT per tone=
-12 dBm
100 MHz
500 MHz
850 MHz
1950 MHz
2400 MHz
3500 MHz
100 MHz
500 MHz
850 MHz
1950 MHz
2400 MHz
3500 MHz
100 MHz
500 MHz
850 MHz
1950 MHz
2400 MHz
3500 MHz
100MHz, ZS=50
500MHz, ZS=50
850MHz, ZS=50
1950MHz, ZS=50
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111011


Features SGA0363ZDC to 5000MHz, Silicon Germanium Cascadable Gain Block SGA0363Z DC to 5000MHz, SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product D escription The SGA0363Z is a high perfo rmance SiGe HBT MMIC Amplifier. A Darli ngton configuration featuring one-micro n emitters provides high FT and excelle nt thermal perfomance. The heterojuncti on increases breakdown voltage and mini mizes leakage current between junctions . Cancellation of emitter junction non- linearities results in higher suppressi on of intermodulation products. Only tw o DC-blocking capacitors, a bias resist or and an optional RF choke are require d for operation. Optimum Technology Ma tching® Applied GaAs HBT GaAs MESFET I nGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS dB Small Signal Gain vs. Fre quency 25 20 15 10 5 0 0123456 Frequenc y GHz Features  DC to 5000MHz Opera tion  Single Voltage Supply  Low Current Draw: 11mA at 2.5V Typ.  High Output Intercept: 14dBm Typ. at 1.
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