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SGA0363Z

RFMD

SILICON GERMANIUM CASCADABLE GAIN BLOCK

SGA0363ZDC to 5000MHz, Silicon Germanium Cascadable Gain Block SGA0363Z DC to 5000MHz, SILICON GERMANIUM CASCADABLE GA...


RFMD

SGA0363Z

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Description
SGA0363ZDC to 5000MHz, Silicon Germanium Cascadable Gain Block SGA0363Z DC to 5000MHz, SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description The SGA0363Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS dB Small Signal Gain vs. Frequency 25 20 15 10 5 0 0123456 Frequency GHz Features  DC to 5000MHz Operation  Single Voltage Supply  Low Current Draw: 11mA at 2.5V Typ.  High Output Intercept: 14dBm Typ. at 1950MHz Applications  PA Driver Amplifier  Cellular, PCS, GSM, UMTS  IF Amplifier  Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Output Power at 1dB Compression 2.3 dBm 850 MHz 2.3 dBm 1950 MHz 1.6 dBm 2400 MHz Third Order Intercept Point 14.2 dBm 850 MHz 14.0 dBm 1950 MHz 13.1 dBm 2400 MHz Small Signal Gain 19.6 dB 850MHz 17.2 dB 1950MHz 16.2 dB 2400MHz 3dB Bandwidth 5000 MHz Input VSWR 1.8:1 DC to 4500MHz Output VSWR 1.7...




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