MMIC AMPLIFIER. SGA2386Z Datasheet


SGA2386Z AMPLIFIER. Datasheet pdf. Equivalent


Part Number

SGA2386Z

Description

CASCADABLE SiGe HBT MMIC AMPLIFIER

Manufacture

RFMD

Total Page 6 Pages
Datasheet
Download SGA2386Z Datasheet


SGA2386Z
SGA2386ZDC
to 5000MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA2386Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA2386Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Freq. @TL=+25°C
24
GAIN
18
IRL
12
ORL
6
0
01234
Frequency (GHz)
0
-10
-20
-30
-40
5
Features
High Gain: 15.3dB at
1950 MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
15.5
17.2
18.9
dB 850MHz
15.3
dB 1950MHz
14.5
dB 2400MHz
Output Power at 1dB Compression
8.5
dBm
850 MHz
7.5
dBm
1950 MHz
Output Third Intercept Point
20.5
dBm
850 MHz
19.5
dBm
1950 MHz
Bandwidth Determined by Return
Loss (>10dB)
2800
MHz >10dB
Input Return Loss
11.5 dB 1950MHz
Output Return Loss
20.2
dB 1950MHz
Noise Figure
3.2 dB 1950MHz
Device Operating Voltage
2.4 2.7 3.0 V
Device Operating Current
17 20 23 mA
Thermal Resistance
(Junction - Lead)
97 °C/W
Test Conditions: VS=5V, ID=20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=120Ω, TL=25°C, ZS=ZL=50Ω
DS100916
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6

SGA2386Z
SGA2386Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power
40 mA
5V
+18 dBm
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies
Parameter
Unit
100MHz 500MHz 850MHz 1950MHz
Small Signal Gain
Output Third Order Intercept Point
Output Power at 1dB Compression
dB 18.4 18.0 17.2 15.3
dBm
20.3
20.5
19.5
dBm 8.2 8.8 8.0
Input Return Loss
dB
20.0
19.6
12.0
11.5
Output Return Loss
dB 16.8 22.1 14.8 20.2
Reverse Isolation
dB 21.1 21.1 21.4 21.7
Noise Figure
dB
2.9 2.9 3.5
Test Conditions: VS=5V, ID=20mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=120Ω, TL=25°C, ZS=ZL=50Ω
2400 MHz
14.5
18.5
7.6
13.7
25.2
21.3
3.6
OIP vs. Frequency
3
VD= 2.7 V, ID= 20 mA
30
TL
25
20
15
TL=+25ºC
10
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
10
8
6
4
2
0
0
P vs. Frequency
1dB
VD= 2.7 V, ID= 20 mA
TL=+25ºC
0.5 1 1.5 2 2.5 3
Frequency (GHz)
Noise Figure vs. Frequency
VD= 2.7 V, ID= 20 mA
5
4 TL=+25ºC
3
2
TL=+25ºC
1
0
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100916


Features SGA2386ZDC to 5000MHz, Cascadable SiGe H BT MMIC Amplifier SGA2386Z DC to 5000 MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The SGA2386Z is a high performance SiGe HBT MMIC Amplifier. A Darlington confi guration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increas es breakdown voltage and minimizes leak age current between junctions. Cancella tion of emitter junction non-linearitie s results in higher suppression of inte rmodulation products. Only two DC-block ing capacitors, a bias resistor, and an optional RF choke are required for ope ration. Gain (dB) Return Loss (dB) Op timum Technology Matching® Applied GaA s HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si C MOS Si BJT GaN HEMT RF MEMS Gain & Ret urn Loss vs. Freq. @TL=+25°C 24 GAIN 1 8 IRL 12 ORL 6 0 01234 Frequency (GHz) 0 -10 -20 -30 -40 5 Features  High Gain: 15.3dB at 1950 MHz  Cascadable 50Ω  Operates from Single Sup.
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