SGA6286Z MMIC AMPLIFIER Datasheet

SGA6286Z Datasheet, PDF, Equivalent


Part Number

SGA6286Z

Description

CASCADABLE SiGe HBT MMIC AMPLIFIER

Manufacture

RFMD

Total Page 7 Pages
Datasheet
Download SGA6286Z Datasheet


SGA6286Z
SGA6286ZDC
to 5500MHz,
Cascadable
SiGe HBT
MMIC Ampli-
fier
SGA6286Z
DC to 5500MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
Package: SOT-86
Product Description
The SGA6286Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one-micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss vs. Frequency
VD= 4.0 V, ID= 75 mA (Typ.)
20 0
15 GAIN
-10
10 IRL
ORL
5
-20
TL=+25ºC
-30
0 -40
0123456
Frequency (GHz)
Features
Broadband Operation: DC to
5500 MHz
Cascadable 50Ω
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
12.5
13.6
15.2
dB 850MHz
12.4
dB 1950MHz
11.2
dB 2400MHz
Output Power at 1dB Compression
18.7
dBm
850 MHz
17.8
dBm
1950 MHz
Output Third Intercept Point
35.0
dBm
850 MHz
33.0
dBm
1950 MHz
Bandwidth Determined by Return
Loss
5500
MHz >10dB
Input Return Loss
14.6 dB 1950MHz
Output Return Loss
13.9
dB 1950MHz
Noise Figure
4.2 dB 1950MHz
Device Operating Voltage
3.6 4.0 4.4 V
Device Operating Current
67 75 83 mA
Thermal Resistance
(Junction - Lead)
97 °C/W
Test Conditions: VS=8V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=51Ω, TL=25°C, ZS=ZL=50Ω
DS100915
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 7

SGA6286Z
SGA6286Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power
150 mA
6V
+18 dBm
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
+150
-40 to +85
+150
°C
°C
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical Performance at Key Operating Frequencies
Parameter
Unit 100 500 850 1950
MHz MHz MHz MHz
Small Signal Gain
dB
14.0
13.9
13.6
12.4
Output Third Order Intercept Point
dBm 37.0 36.0 35.0 33.0
Output Power at 1dB Compression
dBm 18.7 19.0 18.7 17.8
Input Return Loss
dB 18.8 17.4 15.8 14.6
Output Return Loss
dB
35.7
36.3
23.8
13.9
Reverse Isolation
dB
18.4
18.6
18.8
18.8
Noise Figure
dB 4.0 3.9 3.9 4.2
Test Conditions: VS=8V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, RBIAS=51Ω, TL=25°C, ZS=ZL=50Ω
2400
MHz
11.2
31.4
16.8
15.5
13.4
18.5
4.4
3500
MHz
9.6
28.1
15.2
20.6
16.4
17.0
4.8
2 of 7
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100915


Features SGA6286ZDC to 5500MHz, Cascadable SiGe H BT MMIC Amplifier SGA6286Z DC to 5500 MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The SGA6286Z is a high performance SiGe HBT MMIC Amplifier. A Darlington confi guration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increas es breakdown voltage and minimizes leak age current between junctions. Cancella tion of emitter junction non-linearitie s results in higher suppression of inte rmodulation products. Only two DC-block ing capacitors, a bias resistor, and an optional RF choke are required for ope ration. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain (dB) Return Loss (dB) Gain & Ret urn Loss vs. Frequency VD= 4.0 V, ID= 7 5 mA (Typ.) 20 0 15 GAIN -10 10 IRL ORL 5 -20 TL=+25ºC -30 0 -40 0123456 Frequency (GHz) Features  Broadband Operation: DC to 5500 MHz  .
Keywords SGA6286Z, datasheet, pdf, RFMD, CASCADABLE, SiGe, HBT, MMIC, AMPLIFIER, GA6286Z, A6286Z, 6286Z, SGA6286, SGA628, SGA62, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)