SGC4263Z GAIN BLOCK Datasheet

SGC4263Z Datasheet, PDF, Equivalent


Part Number

SGC4263Z

Description

50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

Manufacture

RFMD

Total Page 9 Pages
Datasheet
Download SGC4263Z Datasheet


SGC4263Z
SGC4263ZSGC4263Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGC4263Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC4263Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC4263Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain, RL and NF versus Frequency
30
20 S21
10
0 Bias Tee Data, ZS = ZL = 50 Ohms, TL
-10
-20
-30
0.0
S22
S11
0.5 1.0 1.5 2.0 2.5
Frequency (GHz)
Gain
IRL
ORL
3.0 3.5
Features
Single Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P1dB=15.1dBm at 1950MHz
OIP3=30dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain, (G)
15.0
dB 500MHz
13.2
14.7
16.2
dB *850MHz
12.6
14.0
15.4
dB 1950MHz
Output Power at 1dB Compression
(P1dB)
15.2
15.1
dBm
dBm
500 MHz
850 MHz
13.6
15.1
dBm
1950 MHz
Output Third Order Intercept Point
(OIP3)
32.0
30.5
dBm
dBm
500 MHz
850 MHz
27.0 30.0
dBm
1950 MHz
Input Return Loss, (IRL)
17.0 23.5
dB 1950MHz
Output Return Loss, (ORL)
17.0 21.0
dB 1950MHz
Noise Figure (NF)
3.3 4.5 dB 1930MHz
Device Operating Voltage, (VD)
3.0 V
Device Operating Current, (ID) 44 55 64 mA
Thermal Resistance
130
°C/W
(Junction - Lead) (Rth, j-l)
Test Conditions: VD=3V, ID=55mA Typ., TL=25°C, OIP3 Tone Spacing=1MHz. *Bias Tee Data, ZS=ZL=50POUT per tone=0dBm, Application Circuit
Data Unless Otherwise Noted
DS140502
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 9

SGC4263Z
SGC4263Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power1
110 mA
4V
12 dBm
Max RF Input Power2
18 dBm
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
+150
-40 to +85
+150
°C
°C
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Moisture Sensitivity Level
MSL 1
Notes
1. Load condition: VSWR 10:1; VCC 3.5V
2. Load condition: VSWR 3:1; VCC 3.2V
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=Source Lead Temperature
Typical RF Performance with Application Circuit at Key Operating Frequencies (App Circuit Data Unless Noted Otherwise)
Parameter
Unit *100 500 850 1950 2500 *3500
MHz MHz MHz MHz MHz MHz
Small Signal Gain (G)
dB
15.4
15.0
14.7
14.0
13.1
11.6
Output Third Order Intercept Point (OIP3)
Output Power at 1dB Compression (P1dB)
Input Return Loss (IRL)
dBm
33.0
32.0
30.5
30.0
29.5
27.0
dBm
15.4
15.2
15.1
15.1
15.3
14.3
dB
14.5
16.0
21.5
23.5
16.0
13.0
Output Return Loss (ORL)
dB 13.5 13.5 17.0 21.0 20.5 9.0
Reverse Isolation (S12)
Noise Figure (NF)
dB
18.5
19.0
19.5
19.5
19.5
18.5
dB 2.8 3.2 3.1 3.3 3.5 3.8
Test Conditions: VD=3V, ID=55mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=50, *Bias Tee Data
Typical Performance with Bias Tee, VD=3V, ID=55mA
Noise Figure versus Frequency
5.0
4.5
4.0
3.5
3.0
2.5 25°C
85°C
2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
OIP3 versus Frequency
(0dBm/tone, 1MHz spacing)
35
-40°C
25°C
33 85°C
31
29
27
25
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
2 of 9
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS140502


Features SGC4263ZSGC4263Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Descri ption RFMD’s SGC4263Z is a high perf ormance SiGe HBT MMIC amplifier utilizi ng a Darlington configuration with a pa tented active bias network. The active bias network provides stable current ov er temperature and process Beta variati ons. Designed to run directly from a 3V supply, the SGC4263Z does not require a dropping resistor as compared to typi cal Darlington amplifiers. The SGC4263Z is designed for high linearity 3V gain block applications that require small size and minimal external components. I t is internally matched to 50. Opti mum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS S i BiCMOS  SiGe HBT GaAs pHEMT Si CMO S Si BJT GaN HEMT RF MEMS dB Gain, RL and NF versus Frequency 30 20 S21 10 0 Bias Tee Data, ZS = ZL = 50 Ohms, TL -10 -20 -30 0.0 S22 S11 0.5 1.0 1.5 2 .0 2.5 Frequency (GHz) Gain IRL ORL 3.0 3.5 Features  Single Fixed .
Keywords SGC4263Z, datasheet, pdf, RFMD, 50MHz, to, 4000MHz, ACTIVE, BIAS, SILICON, GERMANIUM, CASCADABLE, GAIN, BLOCK, GC4263Z, C4263Z, 4263Z, SGC4263, SGC426, SGC42, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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