SGC4263Z

SGC4263ZSGC4263Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description RFMD’s SGC4263Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4263Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC4263Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS dB Gain, RL and NF versus Frequency 30 20 S21 10 0 Bias Tee Data, ZS = ZL = 50 Ohms, TL -10 -20 -30 0.0 S22 S11 0.5 1.0 1.5 2.0 2.5 Frequency (GHz) Gain IRL ORL 3.0 3.5 Features  Single Fixed 3V Supply  No Dropping Resistor Required  Patented Self-Bias Circuitry  P1dB=15.1dBm at 1950MHz  OIP3=30dBm at 1950MHz  Robust 1000V ESD, Class 1C HBM Applications  PA Driver Amplifier  Cellular, PCS, GSM, UMTS, WCDMA  IF Amplifier  Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain, (G) 15.0 dB 500MHz 13.2 14.7 16.2 dB *850MHz 12.6 14.0 15.4 dB 1950MHz Output Power at 1dB Compression (P1dB) 15.2 15.1 dBm dBm 500 MHz 850 M...