50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGC2363Z 50MHz to 4000 MHz Active Bias Silicon Germanium Cascadable Gain Block
SGC2363Z
50MHz to 4000MHz ACTIVE BIAS S...
Description
SGC2363Z 50MHz to 4000 MHz Active Bias Silicon Germanium Cascadable Gain Block
SGC2363Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGC2363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC2363Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC2363Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50.
Optimum Technology Matching® Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS
SiGe HBT
GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS
Gain, RL (dB)
Gain & Return Loss VD = 3V, ID = 26mA
30 S21
20
10 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C
0
-10 S22
-20 S11 -30
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
4
Features
Single, Fixed 3V Supply No Dropping Resistor
Required Patented Self-Bias Circuitry P1dB=10.1dBm at 1950MHz OIP3=23dBm at 1950MHz Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier Cellular, PCS, GSM, UMTS,
WCDMA IF Amplifier Wireless Data, Satellite
Parameter
Specification Min. Typ. Max.
Unit
Small Signal Gain
15.5
17.0
18.5
dB 850MHz
11.6
13.1
14.6 dB 1950MHz
12.3
dB 2400MHz
Output Power at...
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