GAIN BLOCK. SGC2463Z Datasheet


SGC2463Z BLOCK. Datasheet pdf. Equivalent


Part Number

SGC2463Z

Description

50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

Manufacture

RFMD

Total Page 7 Pages
Datasheet
Download SGC2463Z Datasheet


SGC2463Z
SGC2463ZSGC2463Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGC2463Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC2463Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC2463Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss VD = 3V, ID = 25mA
30
S21
20
10
0 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C
-10 S22
-20 S11
-30
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
4
Features
Single Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P1dB=10.5dBm at 1950MHz
OIP3=23.5dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Small Signal Gain
17.4
19.8
21.3
dB 850MHz
12.9
14.4
15.9
dB 1950MHz
13.4
dB 2400MHz
Output Power at 1dB Compression
10.5
dBm
850 MHz
9.5 10.5
dBm
1950 MHz
9.9
dBm
2400 MHz
Output Third Order Intercept Point
22.5
dBm
850 MHz
21.5 23.5
dBm
1950 MHz
24.0
dBm
2400 MHz
Input Return Loss
10.0
14.0
dB 1950MHz
Output Return Loss
8.5 12.5
dB 1950MHz
Noise Figure
3.5 4.5 dB 1930MHz
Thermal Resistance
255
°C/W
junction - lead
Device Operating Voltage
3.0 V
Device Operating Current
22.0
26.0
30.0
mA
Test Conditions: VD=3V, ID=26mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, TL=25°C, ZS=ZL=50
Condition
DS140429
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 7

SGC2463Z
SGC2463Z
=
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ICE)
Device Voltage (VCE)
RF Input Power* (See Note)
55 mA
4V
12 dBm
Junction Temp (TJ)
Operating Temp Range (TL)
Storage Temp
+150
-55 to +105
+150
°C
°C
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Moisture Sensitivity Level
MSL 1
*Note: Load condition ZL=50
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Typical RF Performance with Application Circuit at Key Operating Frequencies (Bias Tees)
Parameter
Unit 100 500 850
MHz MHz MHz
Small Signal Gain (G)
dB 21.7 21.4 19.8
Output Third Order Intercept Point (OIP3)
dBm 22.5 22.5
Output Power at 1dB Compression (P1dB)
14.0 10.9 10.5
Input Return Loss (IRL)
dB
15.0
12.0
Output Return Loss (ORL)
dB
15.0
12.0
Reverse Isolation (S12)
dB
23.5
25.0
Noise Figure (NF)
dB 2.8 2.8
Test Conditions: VD=3V ID=25mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm
TL=25°C ZS=ZL=50
Typical Performance with Bias Tee, VD=3V, ID=25mA
22.5
10.5
11.5
11.0
25.0
3.1
1950
MHz
14.4
23.5
9.9
14.0
12.5
21.0
3.5
OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing)
28
15
P1dB vs. Frequency
2400
MHz
13.4
24.0
8.6
14.5
11.5
20.0
3.6
13
26
11
24
22
25C
20 -40C
85C
18
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
9
25C
-40C
7 85C
5
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
3500
MHz
10.6
22.5
8.6
13.0
12.0
19.0
4.4
3.5
2 of 7
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS140429


Features SGC2463ZSGC2463Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Descri ption RFMD’s SGC2463Z is a high perfo rmance SiGe HBT MMIC amplifier utilizin g a Darlington configuration with a pat ented active bias network. The active b ias network provides stable current ove r temperature and process Beta variatio ns. Designed to run directly from a 3V supply, the SGC2463Z does not require a dropping resistor as compared to typic al Darlington amplifiers. The SGC2463Z is designed for high linearity 3V gain block applications that require small s ize and minimal external components. It is internally matched to 50. Optim um Technology Matching® Applied GaAs H BT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain, RL (dB) Gain & Return Loss VD = 3V, ID = 25mA 30 S21 20 10 0 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C -10 S22 -20 S11 -30 0 0.5 1 1.5 2 2.5 3 3.5 Frequency (GHz) 4 Features  Single Fixed 3.
Keywords SGC2463Z, datasheet, pdf, RFMD, 50MHz, to, 4000MHz, ACTIVE, BIAS, SILICON, GERMANIUM, CASCADABLE, GAIN, BLOCK, GC2463Z, C2463Z, 2463Z, SGC2463, SGC246, SGC24, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)