SGC4486Z GAIN BLOCK Datasheet

SGC4486Z Datasheet, PDF, Equivalent


Part Number

SGC4486Z

Description

50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK

Manufacture

RFMD

Total Page 6 Pages
Datasheet
Download SGC4486Z Datasheet


SGC4486Z
SGC4486Z
50MHz to
4000 MHz
Active Bias Sili-
con Germa-
nium
Cascadable
Gain Block
SGC4486Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-86
Product Description
RFMD’s SGC4486Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC4486Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC4486Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50Ω.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain & Return Loss VD = 3V, ID = 52mA
30
S21
20
10
Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C
0
-10 S22
-20 S11
-30
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
4
Features
Single Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P1dB=12.7dBm at 1950MHz
OIP3=27.5dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
19.0
20.5
22.0
dB 850MHz
13.0
14.5
16.0 dB 1950MHz
12.3
dB 2400MHz
Output Power at 1dB Compression
13.8
dBm
850 MHz
11.7
12.7
dBm
1950 MHz
12.4
dBm
2400 MHz
Output Third Order Intercept Point
29.0
dBm
850 MHz
25.5
27.5
dBm
1950 MHz
26.5
dBm
2400 MHz
Input Return Loss
10.5
14.5
dB 1950MHz
Output Return Loss
7.5 11.5
dB 1950MHz
Noise Figure
3.4 4.4 dB 1930MHz
Thermal Resistance
145
°C/W
junction - lead
Device Operating Voltage
3.0 V
Device Operating Current
46.0
52.0
58.0
mA
Test Conditions: VD=3V, ID=52mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, TL=25°C, ZS=ZL=50Ω, Bias Tee Data
DS100813
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6

SGC4486Z
SGC4486Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current (ICE)
Device Voltage (VCE)
RF Input Power* (See Note)
110 mA
4V
12 dBm
Junction Temp (TJ)
Operating Temp Range (TL)
Storage Temp
+150
-40 to +85
+150
°C
°C
°C
ESD Rating - Human Body Model
(HBM)
Class 1C
Moisture Sensitivity Level
MSL 1
*Note: Load condition ZL=50Ω
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l and TL=TLEAD
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Typical RF Performance with Application Circuit at Key Operating Frequencies (Bias Tee)
Parameter
Unit 100 500 850
MHz MHz MHz
Small Signal Gain (G)
dB
23.5
22.5
20.5
Output Third Order Intercept Point (OIP3)
Output Power at 1dB Compression (P1dB)
Input Return Loss (IRL)
Output Return Loss (ORL)
dBm 30.5 29.5 29.0
dBm 16.1 14.4 13.8
dB 24.0 15.5 16.5
dB 25.0 17.0 16.5
Reverse Isolation (S12)
dB
25.0
26.0
Noise Figure (NF)
dB 2.8 2.8
Test Conditions: VD=3V ID=52mA Typ. OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm
TL=25°C ZS=ZL=50Ω
25.0
3.1
Typical Performance with Bias Tee, VD=3V, ID=52mA
1950
MHz
14.5
27.5
12.7
14.5
11.5
20.5
3.4
2400
MHz
12.3
26.5
12.4
14.5
12.0
19.0
3.9
OIP3 vs. Frequency (-5dBm/tone, 1MHz spacing)
36
21
P1dB vs. Frequency
34 19
32
17
30
28 15
26
25C
24
-40C
22 85C
13
25C
11 -40C
85C
20
0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
9
0 0.5 1 1.5 2 2.5 3
Frequency (GHz)
3500
MHz
9.5
23.5
10.6
13.0
11.0
17.5
4.8
3.5
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS100813


Features SGC4486Z 50MHz to 4000 MHz Active Bias S ilicon Germanium Cascadable Gain Block SGC4486Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLO CK Package: SOT-86 Product Descriptio n RFMD’s SGC4486Z is a high performan ce SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patente d active bias network. The active bias network provides stable current over te mperature and process Beta variations. Designed to run directly from a 3V supp ly, the SGC4486Z does not require a dro pping resistor as compared to typical D arlington amplifiers. The SGC4486Z is d esigned for high linearity 3V gain bloc k applications that require small size and minimal external components. It is internally matched to 50Ω. Optimum Te chnology Matching® Applied GaAs HBT Ga As MESFET InGaP HBT SiGe BiCMOS Si BiCM OS  SiGe HBT GaAs pHEMT Si CMOS Si B JT GaN HEMT RF MEMS Gain, RL (dB) Gai n & Return Loss VD = 3V, ID = 52mA 30 S 21 20 10 Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C 0 -10 S22 -20 S11.
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