Ordering number:1245C
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB986/2SD1348
50V/4A Switching Applicati...
Ordering number:1245C
PNP/
NPN Epitaxial Planar Silicon Darlington
Transistors
2SB986/2SD1348
50V/4A Switching Applications
Applications
· Power supplies, relay drivers, lamp drivers, electrical equipment.
Features
· Adoption of FBET and MBIT processes. · Low saturation voltage. · High current capacity and wide ASO.
Package Dimensions
unit:mm 2009B
[2SB986/2SD1348]
( ) : 2SB986
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)40V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE1 VCE=(–)2V, IC=(–)100mA
hFE2 VCE=(–)2V, IC=(–)3A
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)50mA
Output Capacitance
Cob VCB=(–)10V
* : The 2SB986/2SD1348 are classified by 100mA hFE as follows :
100 R 200 140 S 280 200 T 400 280 U 560
JEDEC : TO-126
1 : Emitter 2 : Collector 3 : Base
Ratings (–)60 (–)50 (–)6 (–)4 (–)6 1.2 10 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
100* 40
150 25(39)
max (–)1.0 (–)1.0 560*
Unit mA mA
MHz pF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels o...
