C5360 2SC5360 Datasheet

C5360 Datasheet, PDF, Equivalent


Part Number

C5360

Description

2SC5360

Manufacture

Toshiba Semiconductor

Total Page 2 Pages
Datasheet
Download C5360 Datasheet


C5360
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5360
Color TV Chroma Output Applications
2SC5360
Unit: mm
High voltage: VCEO = 300 V
Small collector output capacitance: Cob = 5.0 pF (typ.)
High transition frequency: fT = 100 MHz (typ.)
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
300
300
5
150
50
2.0
12.5
150
55 to 150
Unit
V
V
V
mA
mA
W
°C
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
fT
Cob
VCB = 240 V, IE = 0
VEB = 5 V, IC = 0
IC = 5 mA, IB = 0
VCE = 10 V, IC = 50 mA
IC = 100 mA, IB = 20 mA
IC = 100 mA, IB = 20 mA
VCE = 10 V, IC = 30 mA
VCB = 50 V, IE = 0, f = 1 MHz
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Min Typ. Max Unit
― ― 1.0 µA
― ― 1.0 µA
300
V
40 170
― ― 1.0 V
― ― 1.2 V
40 100 MHz
5.0 6.5 pF
Marking
C5360
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26

C5360
2SC5360
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
030619EAA
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
2 2004-07-26


Features TOSHIBA Transistor Silicon NPN Triple Di ffused Type 2SC5360 Color TV Chroma Out put Applications 2SC5360 Unit: mm • High voltage: VCEO = 300 V • Small c ollector output capacitance: Cob = 5.0 pF (typ.) • High transition frequency : fT = 100 MHz (typ.) Maximum Ratings (Tc = 25°C) Characteristics Collecto r-base voltage Collector-emitter volta ge Emitter-base voltage Collector cur rent Base current Collector power dis sipation Ta = 25°C Tc = 25°C Juncti on temperature Storage temperature ran ge Symbol VCBO VCEO VEBO IC IB PC Tj T stg Rating 300 300 5 150 50 2.0 12.5 1 50 −55 to 150 Unit V V V mA mA W °C °C Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-o ff current Emitter cut-off current Coll ector-emitter breakdown voltage DC curr ent gain Collector-emitter saturation v oltage Base-emitter saturation voltage Transition frequency Collector output c apacitance Symbol Test Condition ICB O IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob VCB = 240 V, IE = 0 VEB = 5.
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