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TLP191B

Toshiba Semiconductor

Photocoupler

TOSHIBA Photocoupler IRED & Photo-Diode Array TLP191B Telecommunication Programmable Controllers MOS Gate Driver MOS FET...


Toshiba Semiconductor

TLP191B

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Description
TOSHIBA Photocoupler IRED & Photo-Diode Array TLP191B Telecommunication Programmable Controllers MOS Gate Driver MOS FET Gate Driver TLP191B Unit: mm The TOSHIBA mini-flat coupler TLP191B is a small outline coupler, suitable for surface mount assembly. The TLP191B consists of an infrared emitting diode, optically coupled to a series connected photo diode array with shunt resistor which is suitable for MOS FET gate drive. TLP191B : Mini Flat Package, 4Pin, one circuit Open voltage: 7.0 V (min) Short current: 24 μA (min) Isolation voltage: 2500 Vrms (min) UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 TOSHIBA 11-4C1 Weight: 0.09 g (typ.) Pin Configuration (top view) 1 6 3 4 1 . Anode 3 . Cathode 4 . Cathode 6 . Anode © 2019 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1990-11 2019-06-17 Absolute Maximum Ratings (Ta = 25°C) TLP191B Characteristics Symbol Rating Unit Forward current IF 50 mA Forward current derating (Ta ≥ 25°C ) ΔIF/°C -0.5 mA/°C Pulse forward current (100 μs pulse, 100 pps) LED Reverse voltage IFP 1 A VR 3 V Diode power dissipation PD 100 mW Diode power dissipation derating (Ta >25°C) ΔPD /°C -1.0 mW/°C Junction temperature Tj 125 °C Forward current IFD 50 μA Reverse voltage Detector Output power dissipation VRD 10 V PO 0.5 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55 to 1...




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