INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD2236
DESCRIPT...
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD2236
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1477
APPLICATIONS ·Designed for driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
100 V
wwwVCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous Collector Power Dissipation
PC @ TC=25℃ TJ Junction Temperature
5A 60 W 150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon
NPN Power
Transistor
isc Product Specification
2SD2236
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Beakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Beakdown Voltage
IC= 50μA; IE=0
V(BR)EBO Emitter-Base Beakdown Voltage
IE= 50μA; IC=0
100 V 100 V
5V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.3A
ICBO Collector Cutoff Current
i.cnIEBO Emitter Cutoff Current .iscsemhFE DC Current Gain w hFE Classifications wwD E F
VCB= 100V; IE= 0 VEB= 5V; IC= 0 IC= 1A; VCE= 5V
60
1.5 V 2.0 V 10 μA 10 μA 320
60-120 100-200 160-320
isc Website:www.iscsemi.cn
2
...