D2236 2SD2236 Datasheet

D2236 Datasheet, PDF, Equivalent


Part Number

D2236

Description

2SD2236

Manufacture

Inchange Semiconductor

Total Page 2 Pages
Datasheet
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D2236
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD2236
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.)
·Wide Area of Safe Operation
·Complement to Type 2SB1477
APPLICATIONS
·Designed for driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
100 V
wwwVCEO
Collector-Emitter Voltage
100 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
5A
60 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

D2236
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD2236
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Beakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Beakdown Voltage
IC= 50μA; IE=0
V(BR)EBO Emitter-Base Beakdown Voltage
IE= 50μA; IC=0
100 V
100 V
5V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.3A
ICBO Collector Cutoff Current
i.cnIEBO Emitter Cutoff Current
.iscsemhFE DC Current Gain
w‹ hFE Classifications
wwD E F
VCB= 100V; IE= 0
VEB= 5V; IC= 0
IC= 1A; VCE= 5V
60
1.5 V
2.0 V
10 μA
10 μA
320
60-120 100-200 160-320
isc Websitewww.iscsemi.cn
2


Features INCHANGE Semiconductor www.DataSheet4U.c om isc Silicon NPN Power Transistor is c Product Specification 2SD2236 DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= 100V(Min.) ·Wide Are a of Safe Operation ·Complement to Typ e 2SB1477 APPLICATIONS ·Designed for driver and general purpose applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .is csemVCBO Collector-Base Voltage 100 V wwwVCEO Collector-Emitter Voltage 1 00 V VEBO Emitter-Base Voltage 5V I C Collector Current-Continuous Collecto r Power Dissipation PC @ TC=25℃ TJ Ju nction Temperature 5A 60 W 150 ℃ Ts tg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn INCH ANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc P roduct Specification 2SD2236 ELECTRICA L CHARACTERISTICS TC=25℃ unless other wise specified SYMBOL PARAMETER COND ITIONS MIN TYP. MAX UNIT V(BR)CEO Col lector-Emitter Beakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Beakdo.
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