D2236

INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SD2236 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1477 APPLICATIONS ·Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i.cnSYMBOL PARAMETER VALUE UNIT .iscsemVCBO Collector-Base Voltage 100 V wwwVCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature 5A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor www.DataSheet4U.com isc Silicon NPN Power Transistor isc Product Specification 2SD2236 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Beakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Beakdown Voltage IC= 50μA; IE=0 V(BR)EBO Emitter-Base Beakdown Voltage IE= 50μA; IC=0 100 V 100 V 5V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB=B 0.3A ICBO Collector Cutoff Current i.cnIEBO Emitter Cutoff Current .iscsemhFE DC Current Gain w‹ hFE Classifications wwD E F VCB= 100V; IE= 0 VEB= 5V; IC= 0 IC= 1A; VCE= 5V 60 1.5 V 2.0 V 10 μA 10 μA 320 60-120 100-200 160-320 isc Website：www.iscsemi.cn 2 ...