BLD135D NPN Transistor Datasheet

BLD135D Datasheet, PDF, Equivalent


Part Number

BLD135D

Description

NPN Transistor

Manufacture

Shenzhen SI Semiconductors

Total Page 6 Pages
Datasheet
Download BLD135D Datasheet


BLD135D
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
产品规格书
Product Specification
NPN D 系列晶体管/ D SERIES TRANSISTORS
BLD135D
●特点: 耐压高 开关速度快 安全工作区宽 符合 RoHS 规范
■ ■ ■ ■FEATURESHIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA RoHS COMPLIANT
●应用: 节能灯 电子镇流器 电子变压器 开关电源
■ ■ ■APPLICATION: FLUORESCENT LAMP
ELECTRONIC BALLAST
ELECTRONIC TRANSFORMER
SWITCH MODE POWER SUPPLY
●最大额定值(Tc=25°C
Absolute Maximum RatingsTc=25°CTO-126/126S/220/220S
参数
符号
额定值
单位
PARAMETER
SYMBOL
VALUE
UNTI
集电极-基极电压
Collector-Base Voltage
VCBO
700 V
集电极-发射极电压
Collector-Emitter Voltage
VCEO
400 V
发射极-基极电压
Emitter- Base Voltage
集电极电流
Collector Current
VEBO
IC
9V
3.5 A
集电极耗散功率
TO-126/126S:50
Total Power Dissipation Ptot TO-220/220S:55 W
最高工作温度
Junction Temperature
Tj
150 °C
贮存温度
Storage Temperature
Tstg
-65-150
●电特性(Tc=25°C
Electronic CharacteristicsTc=25°C
°C
参数名称
符号
测试条件
最小值
最大值
单位
ChARACTERISTICS
集电极-基极截止电流
Collector-Base Cutoff Current
SYMBOL
ICBO
TEST CONDITION
VCB=700V
MIN
MAX
100
UNIT
μA
集电极-发射极截止电流
Collector-Emitter Cutoff Current
ICEO
VCE=400V,IB=0
250 μA
集电极-基极电压
Collector-Base Voltage
集电极-发射极电压
Collector-Emitter Voltage
VCBO
VCEO
IC=1mA,IE=0
IC=10mA,IB=0
700
400
V
V
发射极-基极电压
Emitter -Base Voltage
VEBO
IE=1mA,IC=0
9
V
集电极-发射极饱和电压
Collector-Emitter Saturation Voltage
Vcesat
IC=0.8A,IB=0.2A
IC=3A,IB=0.6A
0.3
V
1.2
发射极-基极饱和电压
Base-Emitter Saturation Voltage
Vbesat
IC=3A,IB=0.6A
1.2 V
电流放大倍数
DC Current Gain
VCE=5V,IC=1mA
hFE VCE=5V,IC=0.2A
VCE=5V,IC=3.5A
7
10
5
40
贮存时间/Storage Time
下降时间/Falling Time
tS
VCC=5V,IC=0.5A,
2.0
tf (UI9600)
4.0
0.8
µs
内置二极管正向压降
Diode Forward Voltage
VF
IF=1.8A
2.0 V
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
普通塑封料/ Normal Package Material 无卤塑封料/Halogen Free
TO-126 普通袋装/NORMAL PACKING
BLD135D TO-126
BLD135D TO-126-HF
TO-126S 普通袋装/NORMAL PACKING
BLD135D TO-126S
BLD135D TO-126S-HF
TO-220 普通袋装/NORMAL PACKING
BLD135D TO-220
BLD135D TO-220-HF
TO-220S 普通袋装/NORMAL PACKING
BLD135D TO-220S
BLD135D TO-220S-HF
TO-220 条管装/TUBE PACKING
BLD135D TO-220-TU
BLD135D TO-220-TU-HF
1
Si semiconductors 2013.12

BLD135D
深圳深爱半导体股份有限公司
Shenzhen SI Semiconductors Co., LTD.
NPN D 系列晶体管/ D SERIES TRANSISTORS
产品规格书
Product Specification
BLD135D
SOA (DC)
TO-126/126S
TO-220/220S
%
120
100
80
60
40
20
0
0
PtotTj
IS/B
Ptot
50 100 150 Tj(℃)200
100.00
hFE
hFE - Ic
10.00
Tj=125
Tj=25℃
Tj= 40
100.00
hFE
hFE - Ic
Tj=125
10.00
Tj=25
Tj= 40
Vce=1.5V
Vce=5V
1.00
0.001
0.01
10.00
Vces(v)
hFE=5
0.1
Vcesat - Ic
1
Tj=125
Ic(A)
10
Tj=25
1.00
0.001
0.01
10.00
Vbes(v)
hFE=5
0.1 1
Vbesat - Ic
Ic(A)
10
1.00
0.10
Tj= 40
1.00
Tj= 40
Tj=25
Tj=125
0.01
0.1
Ic(A)
0.10
1 10 0.1
Si semiconductors 2013.12
Ic(A)
1 10
2


Features Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS BLD135D ●: RoHS ■ ■ ■ ■●FEATURES: HIGH VOLT AGE CAPABILITY HIGH SPEED SWITCHING WID E SOA RoHS COMPLIANT ●: ■ ■ ■●APPLICATION: FLUORESCENT LAMP E LECTRONIC BALLAST ELECTRONIC TRANSFORM ER ■SWITCH MODE POWER SUPPLY ●( Tc=25°C) ●Absolute Maximum Rating s(Tc=25°C) TO-126/126S/220/220S PARAMETER SYMBOL VALUE UNTI - Collector-Base Voltage VCBO 700 V - Collector-Emitter Voltage VCEO 400 V - Emitter- Base Voltage Collector C urrent VEBO IC 9V 3.5 A TO-126/126 S:50 Total Power Dissipation Ptot TO-2 20/220S:55 W Junction Temperature Tj 150 °C Storage Temperature Tstg -65-150 ●(Tc=25°C) ●Electron ic Characteristics(Tc=25°C) °C ChARACTERISTICS - Collector -Base Cutoff Current SYMBOL ICBO TEST CONDITION VCB=700V MIN MAX 100 UNIT μA - Collector-Emitter Cutoff Current ICEO VCE=400V,IB=0 250 μA - Collector-Base Voltage - Collector-Emitter Volt.
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