BLD135D

Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D / D SERIES TRANSISTORS BLD135D ●: RoHS ■ ■ ■ ■●FEATURES： HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA RoHS COMPLIANT ●: ■ ■ ■●APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST ELECTRONIC TRANSFORMER ■SWITCH MODE POWER SUPPLY ●（Tc=25°C） ●Absolute Maximum Ratings（Tc=25°C） TO-126/126S/220/220S PARAMETER SYMBOL VALUE UNTI - Collector-Base Voltage VCBO 700 V - Collector-Emitter Voltage VCEO 400 V - Emitter- Base Voltage Collector Current VEBO IC 9V 3.5 A TO-126/126S:50 Total Power Dissipation Ptot TO-220/220S:55 W Junction Temperature Tj 150 °C Storage Temperature Tstg -65-150 ●（Tc=25°C） ●Electronic Characteristics（Tc=25°C） °C ChARACTERISTICS - Collector-Base Cutoff Current SYMBOL ICBO TEST CONDITION VCB=700V MIN MAX 100 UNIT μA - Collector-Emitter Cutoff Current ICEO VCE=400V,IB=0 250 μA - Collector-Base Voltage - Collector-Emitter Voltage VCBO VCEO IC=1mA,IE=0 IC=10mA,IB=0 700 400 V V - Emitter -Base Voltage VEBO IE=1mA,IC=0 9 V - Collector-Emitter Saturation Voltage Vcesat IC=0.8A,IB=0.2A IC=3A,IB=0.6A 0.3 V 1.2 - Base-Emitter Saturation Voltage Vbesat IC=3A,IB=0.6A 1.2 V DC Current Gain VCE=5V,IC=1mA hFE VCE=5V,IC=0.2A VCE=5V,IC=3.5A 7 10 5 40 /Storage Time /Falling Time tS VCC=5V,IC=0.5A, 2.0 tf (UI9600) 4.0 0.8 µs Diode Forward Voltage VF IF=1.8A 2.0 V ●/ORDERING INFORMATION: /PACKING ...