Zener Diode. HZU16L Datasheet


HZU16L Diode. Datasheet pdf. Equivalent


HZU16L


Silicon Epitaxial Planar Zener Diode
HZU-L Series
Silicon Epitaxial Planar Zener Diode for Low Noise Application
REJ03G0043-0300Z Rev.3.00
Jul.28.2004
Features
• Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage and low zener impedance. • Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. • Ultra small Resin Package (URP) is suitable for surface mount design.

Ordering Information
Type No. HZU-L Series

Laser Mark Type No.

Package Code URP

Pin Arrangement

Cathode mark Mark
1 061 2
1. Cathode 2. Anode

Rev.3.00, Jul.28.2004, page 1 of 6

HZU-L Series
Absolute Maximum Ratings

Item Power dissipation Junction temperature Storage temperature

Symbol Pd Tj Tstg

Value 150 150
−55 to +150

(Ta = 25°C) Unit mW °C °C

Electrical Characteristics

Zener Voltage

Reverse Current

Type HZU6L

Grade A1

VZ (V)*1 Min Max 5.2 5.5

Test Condition
IZ (mA) 0.5

IR (µA) Max 1

Test Condition
VR (V) 2.0

A2 5.3 5.6

A3 5.4 5.7

B1 5.5 5.8

B2 5.6 5.9

B3 5.7 6.0

C1 5.8 6.1

C2 6.0 6.3

C3 6.1 6.4

HZU7L A1 6.3 6.6

0.5

1

3.5

A2 6.4 6.7

A3 6.6 6.9

B1 6.7 7.0

B2 6.9 7.2

B3 7.0 7.3

C1 7.2 7.6

C2 7.3 7.7

C3 7.5 7.9

HZU9L A1 7.7 8.1

0.5

1

6.0

A2 7.9 8.3

A3 8.1 8.5

B1 8.3 8.7

B2 8.5 8.9

B3 8.7 9.1

C1 8.9 9.3

C2 9.1 9.5

C3 9.3 9.7

HZU11L A1 9.5 9.9

0.5

1

8.0

A2 9.7 10.1

A3 9.9 10.3

B1 10.2 10.6

B2 10.4 10.8

B3 10.7 11.1

Notes...



HZU16L
HZU-L Series
Silicon Epitaxial Planar Zener Diode for Low Noise Application
REJ03G0043-0300Z
Rev.3.00
Jul.28.2004
Features
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
Low leakage and low zener impedance.
Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No.
HZU-L Series
Laser Mark
Type No.
Package Code
URP
Pin Arrangement
Cathode mark
Mark
1 061 2
1. Cathode
2. Anode
Rev.3.00, Jul.28.2004, page 1 of 6

HZU16L
HZU-L Series
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
150
150
55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
Zener Voltage
Reverse Current
Type
HZU6L
Grade
A1
VZ (V)*1
Min Max
5.2 5.5
Test
Condition
IZ (mA)
0.5
IR (µA)
Max
1
Test
Condition
VR (V)
2.0
A2 5.3 5.6
A3 5.4 5.7
B1 5.5 5.8
B2 5.6 5.9
B3 5.7 6.0
C1 5.8 6.1
C2 6.0 6.3
C3 6.1 6.4
HZU7L A1 6.3 6.6
0.5
1
3.5
A2 6.4 6.7
A3 6.6 6.9
B1 6.7 7.0
B2 6.9 7.2
B3 7.0 7.3
C1 7.2 7.6
C2 7.3 7.7
C3 7.5 7.9
HZU9L A1 7.7 8.1
0.5
1
6.0
A2 7.9 8.3
A3 8.1 8.5
B1 8.3 8.7
B2 8.5 8.9
B3 8.7 9.1
C1 8.9 9.3
C2 9.1 9.5
C3 9.3 9.7
HZU11L A1 9.5 9.9
0.5
1
8.0
A2 9.7 10.1
A3 9.9 10.3
B1 10.2 10.6
B2 10.4 10.8
B3 10.7 11.1
Notes: 1. Tested with DC.
2. C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.
Failure criterion ; According to IR spec.
Dynamic Resistance
Test
rd () Condition
Max
IZ (mA)
150 0.5
80 0.5
60 0.5
60 0.5
60 0.5
80 0.5
(Ta = 25°C)
ESD-Capability
(V) *2
Min
200
200
200
200
Rev.3.00, Jul.28.2004, page 2 of 6




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