Silicon Epitaxial Planar Zener Diode
HZU-L Series
Silicon Epitaxial Planar Zener Diode for Low Noise Application
REJ03G0043-0300Z Rev.3.00
Jul.28.2004
Featur...
Description
HZU-L Series
Silicon Epitaxial Planar Zener Diode for Low Noise Application
REJ03G0043-0300Z Rev.3.00
Jul.28.2004
Features
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2V through 38V of zener voltage provide flexible application. Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No. HZU-L Series
Laser Mark Type No.
Package Code URP
Pin Arrangement
Cathode mark Mark
1 061 2
1. Cathode 2. Anode
Rev.3.00, Jul.28.2004, page 1 of 6
HZU-L Series
Absolute Maximum Ratings
Item Power dissipation Junction temperature Storage temperature
Symbol Pd Tj Tstg
Value 150 150
−55 to +150
(Ta = 25°C) Unit mW °C °C
Electrical Characteristics
Zener Voltage
Reverse Current
Type HZU6L
Grade A1
VZ (V)*1 Min Max 5.2 5.5
Test Condition
IZ (mA) 0.5
IR (µA) Max 1
Test Condition
VR (V) 2.0
A2 5.3 5.6
A3 5.4 5.7
B1 5.5 5.8
B2 5.6 5.9
B3 5.7 6.0
C1 5.8 6.1
C2 6.0 6.3
C3 6.1 6.4
HZU7L A1 6.3 6.6
0.5
1
3.5
A2 6.4 6.7
A3 6.6 6.9
B1 6.7 7.0
B2 6.9 7.2
B3 7.0 7.3
C1 7.2 7.6
C2 7.3 7.7
C3 7.5 7.9
HZU9L A1 7.7 8.1
0.5
1
6.0
A2 7.9 8.3
A3 8.1 8.5
B1 8.3 8.7
B2 8.5 8.9
B3 8.7 9.1
C1 8.9 9.3
C2 9.1 9.5
C3 9.3 9.7
HZU11L A1 9.5 9.9
0.5
1
8.0
A2 9.7 10.1
A3 9.9 10.3
B1 10.2 10.6
B2 10.4 10.8
B3 10.7 11.1
Notes: 1. Tested with DC.
2. C = 200 pF, R = 0 Ω, Both forward and reverse direction 1 pulse. Failure cr...
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