HZU27L Zener Diode Datasheet

HZU27L Datasheet, PDF, Equivalent


Part Number

HZU27L

Description

Silicon Epitaxial Planar Zener Diode

Manufacture

Renesas Technology

Total Page 7 Pages
Datasheet
Download HZU27L Datasheet


HZU27L
HZU-L Series
Silicon Epitaxial Planar Zener Diode for Low Noise Application
REJ03G0043-0300Z
Rev.3.00
Jul.28.2004
Features
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
Low leakage and low zener impedance.
Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No.
HZU-L Series
Laser Mark
Type No.
Package Code
URP
Pin Arrangement
Cathode mark
Mark
1 061 2
1. Cathode
2. Anode
Rev.3.00, Jul.28.2004, page 1 of 6

HZU27L
HZU-L Series
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
150
150
55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
Zener Voltage
Reverse Current
Type
HZU6L
Grade
A1
VZ (V)*1
Min Max
5.2 5.5
Test
Condition
IZ (mA)
0.5
IR (µA)
Max
1
Test
Condition
VR (V)
2.0
A2 5.3 5.6
A3 5.4 5.7
B1 5.5 5.8
B2 5.6 5.9
B3 5.7 6.0
C1 5.8 6.1
C2 6.0 6.3
C3 6.1 6.4
HZU7L A1 6.3 6.6
0.5
1
3.5
A2 6.4 6.7
A3 6.6 6.9
B1 6.7 7.0
B2 6.9 7.2
B3 7.0 7.3
C1 7.2 7.6
C2 7.3 7.7
C3 7.5 7.9
HZU9L A1 7.7 8.1
0.5
1
6.0
A2 7.9 8.3
A3 8.1 8.5
B1 8.3 8.7
B2 8.5 8.9
B3 8.7 9.1
C1 8.9 9.3
C2 9.1 9.5
C3 9.3 9.7
HZU11L A1 9.5 9.9
0.5
1
8.0
A2 9.7 10.1
A3 9.9 10.3
B1 10.2 10.6
B2 10.4 10.8
B3 10.7 11.1
Notes: 1. Tested with DC.
2. C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse.
Failure criterion ; According to IR spec.
Dynamic Resistance
Test
rd () Condition
Max
IZ (mA)
150 0.5
80 0.5
60 0.5
60 0.5
60 0.5
80 0.5
(Ta = 25°C)
ESD-Capability
(V) *2
Min
200
200
200
200
Rev.3.00, Jul.28.2004, page 2 of 6


Features HZU-L Series Silicon Epitaxial Planar Ze ner Diode for Low Noise Application REJ 03G0043-0300Z Rev.3.00 Jul.28.2004 Feat ures • Diode noise level of this seri es is approximately 1/3-1/10 lower than the HZ series. • Low leakage and low zener impedance. • Wide spectrum fro m 5.2V through 38V of zener voltage pro vide flexible application. • Ultra sm all Resin Package (URP) is suitable for surface mount design. Ordering Inform ation Type No. HZU-L Series Laser Mark Type No. Package Code URP Pin Arrang ement Cathode mark Mark 1 061 2 1. Cat hode 2. Anode Rev.3.00, Jul.28.2004, p age 1 of 6 HZU-L Series Absolute Maxim um Ratings Item Power dissipation Junc tion temperature Storage temperature S ymbol Pd Tj Tstg Value 150 150 −55 t o +150 (Ta = 25°C) Unit mW °C °C E lectrical Characteristics Zener Voltag e Reverse Current Type HZU6L Grade A 1 VZ (V)*1 Min Max 5.2 5.5 Test Condi tion IZ (mA) 0.5 IR (µA) Max 1 Test Condition VR (V) 2.0 A2 5.3 5.6 A3 5.4 5.7 B1 5.5 5.8 B2 5.6 5.9 B3 5.7 .
Keywords HZU27L, datasheet, pdf, Renesas Technology, Silicon, Epitaxial, Planar, Zener, Diode, ZU27L, U27L, 27L, HZU27, HZU2, HZU, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)