NVD2955 Power MOSFET Datasheet

NVD2955 Datasheet, PDF, Equivalent


Part Number

NVD2955

Description

Power MOSFET

Manufacture

On Semiconductor

Total Page 7 Pages
Datasheet
Download NVD2955 Datasheet


NVD2955
NTD2955, NVD2955
MOSFET – Power,
P-Channel, DPAK
-60 V, -12 A
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for lowvoltage, high
speed switching applications in power supplies, converters, and power
motor controls. These devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer an additional safety margin against unexpected
voltage transients.
Features
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Designed for LowVoltage, HighSpeed Switching Applications and
to Withstand High Energy in the Avalanche and Commutation Modes
NVD and SVD Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AECQ101 Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous
Nonrepetitive (tp 10 ms)
Drain Current
DrContinuous @ Ta = 25°C
DrSingle Pulse (tp 10 ms)
Total Power Dissipation @ Ta = 25°C
Operating and Storage Temperature
Range
VDSS
VGS
VGSM
60
± 20
± 25
ID
IDM
PD
TJ, Tstg
12
18
55
55 to
175
Vdc
Vdc
Vpk
Adc
Apk
W
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 12 Apk, L = 3.0 mH, RG = 25 W)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
EAS
RqJC
RRqqJJAA
216 mJ
2.73 °C/W
71.4
100
Maximum Lead Temperature for Soldering
Purposes, 1/8 in. from case for
10 seconds
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in pad size
(Cu area = 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu area = 0.412 in2).
www.onsemi.com
V(BR)DSS
60 V
RDS(on) TYP
155 mW @ 10 V, 6 A
ID MAX
12 A
D
PChannel
G
S
4
4
12
3
DPAK
CASE 369C
STYLE 2
1 23
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
1
Gate
2
Drain
3
Source
12 3
Gate Drain Source
A
NT2955/NV2955
NT2955
Y
WW
G
= Assembly Location*
= Specific Device Code (DPAK)
= Specific Device Code (IPAK)
= Year
= Work Week
= PbFree Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
May, 2019 Rev. 16
1
Publication Order Number:
NTD2955/D

NVD2955
NTD2955, NVD2955
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 0.25 mA)
(Positive Temperature Coefficient)
V(BR)DSS
60
67
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 60 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = 60 Vdc, TJ = 150°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
mAdc
− − −10
− − −100
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
(Negative Temperature Coefficient)
VGS(th)
Vdc
2.0 2.8 4.0
4.5 mV/°C
Static DrainSource OnState Resistance
(VGS = 10 Vdc, ID = 6.0 Adc)
DraintoSource OnVoltage
(VGS = 10 Vdc, ID = 12 Adc)
(VGS = 10 Vdc, ID = 6.0 Adc, TJ = 150°C)
Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc)
DYNAMIC CHARACTERISTICS
RDS(on)
VDS(on)
gFS
W
0.155 0.180
1.86
2.6
2.0
Vdc
8.0 Mhos
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = F25=V1d.0c,MVHGzS)= 0 Vdc,
SWITCHING CHARACTERISTICS (Notes 3 and 4)
Ciss
Coss
Crss
500 750
pF
150 250
50 100
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
Gate Charge
(VDD = 30 Vdc, ID = 12 A,
VGS = 10 V, RG = 9.1 W)
(VDS = 48IDVd=c, 1V2GSA)= 10 Vdc,
DRAINSOURCE DIODE CHARACTERISTICS (Note 3)
td(on)
tr
td(off)
tf
QT
QGS
QGD
10 20 ns
45 85
26 40
48 90
15 30 nC
4.0
7.0
Diode Forward OnVoltage
(IS = 12 Adc, VGS = 0 V)
(IS = 12 Adc, VGS = 0 V, TJ = 150°C)
VSD
Vdc
− −1.6 2.5
− −1.3
Reverse Recovery Time
(IS = 12 A, dIS/dt = 100 A/ms ,VGS = 0 V)
trr 50
ns
ta 40
tb 10
Reverse Recovery Stored Charge
QRR
0.10
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Indicates Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperature.
www.onsemi.com
2


Features NTD2955, NVD2955 MOSFET – Power, P-Ch annel, DPAK -60 V, -12 A This Power MOS FET is designed to withstand high energ y in the avalanche and commutation mode s. Designed for low−voltage, high− speed switching applications in power s upplies, converters, and power motor co ntrols. These devices are particularly well suited for bridge circuits where d iode speed and commutating safe operati ng areas are critical and offer an addi tional safety margin against unexpected voltage transients. Features • Avala nche Energy Specified • IDSS and VDS( on) Specified at Elevated Temperature Designed for Low−Voltage, High−S peed Switching Applications and to With stand High Energy in the Avalanche and Commutation Modes • NVD and SVD Prefi x for Automotive and Other Applications Requiring Unique Site and Control Chan ge Requirements; AEC−Q101 Qualified a nd PPAP Capable • These Devices are P b−Free and are RoHS Compliant MAXIMU M RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Sourc.
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