TPH1R005PL

MOSFETs Silicon N-channel MOS (U-MOS-H) TPH1R005PL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators 2. Features (1) High-speed switching (2) Small gate charge: QSW = 34 nC (typ.) (3) Small output charge: Qoss = 98 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.8 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 45 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH1R005PL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-01 2018-07-13 Rev.3.0 TPH1R005PL 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 45 V Gate-source voltage VGSS ±20 Drain current (DC) (Tc = 25 ) (Note 1), (Note 2) ID 150 A Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 280 A Drain current (pulsed) (t = 100 µs) (Note 1) IDP 500 A Power dissipation (Tc = 25 ) PD 170 W Power dissipation (Note 3) PD 3.0 W Power dissipation (Note 4) PD 0.96 W Single-pulse avalanche energy (Note 5) EAS 243 mJ Single-pulse avalanche current (Note 5) IAS 120 A Channel temperature Tch 175  Storage temperature Tstg -55 to 175  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in t...