FTK1N60P

SEMICONDUCTOR TECHNICAL DATA FTK1N60P / F / D / I 1.0 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) = 9 .6Ω@VGS =10V * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.5 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2 Drain Power MOSFET I: 1 D: 1 TO - 251 TO - 252 P: 1 TO - 220 F: 1 TO - 220F 1.Gate 3 Source ORDERING INFORMATION Ordering Number FTK1N60P FTK1N60F FTK1N60I FTK1N60D Note: Pin Assignment: G: Gate D: Drain Package TO-220 TO-220F TO-251 TO-252 S: Source Pin Assignment 123 GD S GD S GD S GD S Packing Tube Tube Tube Tape Reel 2008. 1. 28 Revision No : 0 1/7 FTK1N60P / F / D / I ABSOLUTE MAXIMUM RATINGS (TC = 25˚C, unless otherwise specified) Power MOSFET PARAMET SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 1.0 A Continuous Drain Current Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C ID 1.0 A 0.6 IDM 4 A Avalanche Energy Single Pulse (Note 3) Repetitive Limited b...