N-CHANNEL MOSFET
SEMICONDUCTOR
TECHNICAL DATA
FTK1N60P / F / D / I
1.0 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The FTK 1N60 is a ...
Description
SEMICONDUCTOR
TECHNICAL DATA
FTK1N60P / F / D / I
1.0 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The FTK 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 9 .6Ω@VGS =10V * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.5 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
SYMBOL
2 Drain
Power MOSFET
I: 1
D: 1
TO - 251 TO - 252
P: 1
TO - 220
F:
1
TO - 220F
1.Gate
3 Source
ORDERING INFORMATION
Ordering Number
FTK1N60P FTK1N60F FTK1N60I FTK1N60D Note: Pin Assignment: G: Gate
D: Drain
Package
TO-220 TO-220F TO-251 TO-252 S: Source
Pin Assignment 123 GD S GD S GD S GD S
Packing
Tube Tube Tube Tape Reel
2008. 1. 28
Revision No : 0
1/7
FTK1N60P / F / D / I
ABSOLUTE MAXIMUM RATINGS (TC = 25˚C, unless otherwise specified)
Power MOSFET
PARAMET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600 V
Gate-Source Voltage
VGSS
±30 V
Avalanche Current (Note 2)
IAR 1.0 A
Continuous Drain Current Pulsed Drain Current (Note 2)
TC = 25°C TC = 100°C
ID
1.0 A 0.6
IDM 4 A
Avalanche Energy
Single Pulse (Note 3) Repetitive Limited b...
Similar Datasheet