SiT8004 Power Oscillator Datasheet

SiT8004 Datasheet, PDF, Equivalent


Part Number

SiT8004

Description

Low Power Oscillator

Manufacture

Si Time

Total Page 4 Pages
Datasheet
Download SiT8004 Datasheet


SiT8004
SiT8004
Low Power Oscillator for High Frequency Applications
Features, Benefits and Applications
Lowest power, high frequency oscillator with 6.3 mA typical active current
125MHz to 150MHz frequency range
LVCMOS/LVTTL compatible output
Excellent frequency stability over temperature, ±20 PPM
Ultra low standby current, 1.2 µA
Standby or output enable modes
Four industry-standard packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm
Drop-in replacement of quartz
Ultra short lead time
All-silicon device with outstanding reliability of 2 FIT (10x improvement over quartz-based devices),
enhancing system mean-time-to-failure (MTBF)
Ideal for high frequency applications in networking, storage, computer servers and communications
Ideal for high speed protocals: GPON, EPON, Ethernet, SATA/SAS, DDR, PCI
Specifications
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Condition
Output Frequency Range
Frequency Stability
f 125 - 150 MHz
F_stab
-20
+20 PPM Inclusive of: Initial stability, operating temperature, rated power,
-25 – +25 PPM supply voltage change, load change, shock and vibration
-50 – +50 PPM ± 20 PPM available in extended commercial temperature only
Aging
Ag –1.0
1.0 PPM 1st year at 25°C
Operating Temperature Range T_use
-20
+70 °C Extended Commercial
-40 – +85 °C Industrial
Supply Voltage
Vdd 2.25 2.5 2.75
V
2.52 2.8 3.08
V
2.97 3.3 3.63
V
Current Consumption
Idd – 6.7 8 mA No load condition, f = 125 MHz, Vdd = 3.3 V
– 6.2 7 mA No load condition, f = 125 MHz, Vdd = 2.5 V or 2.8 V
Standby Current
I_std
2.4 4.3 µA ST = GND, Vdd = 3.3 V, Output is Weakly Pulled Down
– 1.2 2.2 µA ST = GND, Vdd = 2.5 or 2.8 V, Output is Weakly Pulled Down
Duty Cycle
DC 40 50 60 % All Vdds
Rise/Fall Time
Tr, Tf
1
2 ns 20% - 80% Vdd=2.5 V, 2.8 V or 3.3 V, 15 pf load
Output Voltage High
VOH
90%
– Vdd IOH = -4 mA (Vdd = 3.3 V)
IOH = -3 mA (Vdd = 2.8 V and Vdd = 2.5 V)
Output Voltage Low
VOL
10%
Vdd IOL = 4 mA (Vdd = 3.3 V)
IOL = 3 mA (Vdd = 2.8 V and Vdd = 2.5 V)
Output Load
Ld –
– 15 pF At 125MHz and max supply voltage. Contact SiTime for higher output
load option
Input Voltage High
VIH 70%
– Vdd Pin 1, OE or ST
Input Voltage Low
VIL –
30%
Vdd Pin 1, OE or ST
Startup Time
T_start
– 10 ms Measured from the time Vdd reaches its rated minimum value
Resume Time
T_resume
3.0 3.8 ms Measured from the time ST pin crosses 50% threshold
RMS Period Jitter
T_jitt
– 4.5 ps f = 125 MHz, Vdd = 2.5 V, 2.8 V or 3.3 V
RMS Phase Jitter (random)
T_phj
0.5
ps f = 125 MHz, Integration bandwidth = 900 kHz to 7.5 MHz,
VDD = 2.5 V, 2.8 V, or 3.3 V
SiTime Corporation
Rev. 1.0
990 Almanor Avenue
Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised November 11, 2010

SiT8004
SiT8004
Low Power Oscillator for High Frequency Applications
Specifications (Cont.)
Pin Description Tables
Pin #1 Functionality
OE
H or Open: specified frequency output
L: output is high impedance
ST
H or Open: specified frequency output
L: output is low level (weak pull down). Oscillation stops
Pin Map
Pin Connection
1 OE/ST
2 GND
3 CLK
4 VDD
Absolute Maximum Table
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC
is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
VDD
Electrostatic Discharge
Theta JA (with copper plane on VDD and GND)
Theta JC (with PCB traces of 0.010 inch to all pins)
Soldering Temperature (follow standard Pb free soldering guidelines)
Number of Program Writes
Program Retention over -40 to 125°C, Process, VDD (0 to 3.65 V)
Min.
-65
-0.5
1,000+
Max.
150
4
2000
75
24
260
1
Unit
°C
V
V
°C/W
°C/W
°C
NA
years
Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Startup and Resume Timing Diagram
90% Vdd
Vdd
Pin 4 Voltage
T_start
CLK Output
50% Vdd
Vdd ST Voltage
T_resume
CLK Output
T_start: Time to start from power-off
(ST/OE Mode)
T_resume: Time to resume from ST
(ST Mode Only)
Rev. 1.0
Page 2 of 4
www.sitime.com


Features SiT8004 Low Power Oscillator for High Fr equency Applications ■ Features, Ben efits and Applications ■ Lowest power , high frequency oscillator with 6.3 mA typical active current ■ 125MHz to 1 50MHz frequency range ■ LVCMOS/LVTTL compatible output ■ Excellent frequen cy stability over temperature, ±20 PPM ■ Ultra low standby current, 1.2 µA ■ Standby or output enable modes ■ Four industry-standard packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 m m ■ Drop-in replacement of quartz ■ Ultra short lead time ■ All-silicon device with outstanding reliability of 2 FIT (10x improvement over quartz-base d devices), enhancing system mean-time- to-failure (MTBF) ■ Ideal for high fr equency applications in networking, sto rage, computer servers and communicatio ns ■ Ideal for high speed protocals: GPON, EPON, Ethernet, SATA/SAS, DDR, PC I ■ Specifications Electrical Chara cteristics Parameter Symbol Min. Typ. Max. Unit Condition Output Frequency Range Frequency Stability f 125 - 150 MHz F_stab -.
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