MOSFET. ICE10N60 Datasheet

ICE10N60 Datasheet PDF


Part

ICE10N60

Description

N-Channel Enhancement Mode MOSFET

Manufacture

Icemos

Page 4 Pages
Datasheet
Download ICE10N60 Datasheet


ICE10N60 Datasheet
ICE10N60
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Product Summary
ID
V(BR)DSS
rDS(ON)
Qg
TA = 25°C
ID = 250uA
VGS = 10V
VDS = 480V
10A
600V
0.28Ω
41nC
Pin Description:
TO-220
G
Max
Min
Typ
Typ
D
S
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse
EAS
IAR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot
Tj, Tstg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
10
30
340
5
50
±20
±30
95
-55 to +150
60
A
A
mJ
A
V/ns
V
W
°C
Ncm
TC = 25°C
TC = 25°C
ID = 8.3A
Limited by Tjmax
VDS = 480V, ID = 9.5A, Tj = 125°C
Static
AC (f>Hz)
TC = 25°C
M 3 & 3.5 screws
Symbol Parameter
Values
Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
RthJA Thermal Resistance, Junction to Ambient
Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
- - 1.3
- - 62
- - 260
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
VGS(th)
IDSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
600 630 -
2.1 3 3.9
- 0.1 1
- - 100
IGSS
RDS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
- - 100
- 0.28 0.33
- 0.75 -
RGS Gate Resistance
-5-
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
µA VDS = 650V, VGS = 0V, Tj = 25°C
VDS = 650V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V
VGS = 10V, ID = 5A, Tj = 25°C
VGS = 10V, ID = 5A, Tj = 150°C
f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
1

ICE10N60 Datasheet
ICE10N60
Symbol Parameter
Dynamic Characteristics
Ciss
Coss
Crss
gfs
td(on)
Tr
td(off )
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Transconductance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Gate Charge Characteristics
Qgs
Qgd
Qg
Vplateau
Gate to Source Charge
Gate to Drain Charge
Gate Charge Total
Gate Plateau Voltage
Reverse Diode
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Irm Peak Reverse Recovery Current
Values
Min Typ Max
Unit Conditions
- 1250 -
- 600 -
-5-
- 12 -
-6-
- 3.5 -
- 54 -
-7-
pF VGS = 0V, VDS = 25V, f = 1 MHz
S VDS = >2*ID* RDS, ID = 5A
nS
VDS = 380V, VGS = 10V, ID = 10A, RG = 4Ω
(External)
- 7.1 -
- 14.5 -
- 41 -
- 5.2 -
nC
VDS = 480V, ID = 10A, VGS = 0 to 10V
V
- 0.9 1.2
- 332 -
- 4.4 -
- 25.6 -
V VGS = 0V, IS = IF
ns
µC VRR = 480V, IS = IF, diF/dt = 100 A/µS
A
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com
2


Features Datasheet pdf ICE10N60 N-Channel Enhancement Mode MOSF ET Features: r Low DS(on) Ultra Low G ate Charge High dv/dt Capability Hi gh Unclamped Inductive Switching (UIS) Capability High Peak Current Capabili ty Increased Transconductance Perform ance Optimized Design For High Perfor mance Power Systems Maximum Ratings @ T j = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 10A 600V 0.28Ω 41nC Pin Descr iption: TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditi ons ID ID, pulse EAS IAR dv/dt Contin ous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanch e Current, Repetitive MOSFET dv/dt Rugg edness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 1 0 30 340 5 50 ±20 ±30 95 -55 to +150 60 A A mJ A V/ns V W °C Ncm TC = 25 C TC = 25°C ID = 8.3A Limited by Tjma x VDS = 480V, ID = 9.5A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 3 & 3.5.
Keywords ICE10N60, datasheet, pdf, Icemos, N-Channel, Enhancement, Mode, MOSFET, CE10N60, E10N60, 10N60, ICE10N6, ICE10N, ICE10, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)