ICE10N65

ICE10N65 ICE10N65 N-Channel Enhancement Mode MOSFET Features Low rDS(on) Ultra Low Gate Charge High dv/dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Increased transconductance performance Optimized design for high performance power systems HALOGEN FREE ID V(BR)DSS rDS(on) Qg Product Summary TA=25oC ID=250uA VGS=10V VDS=480V 9.5A 650V 0.35 41nC D Max Min Typ Typ G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source. Maximum ratings at Tj=25oC, unless otherwise specified Parameter Continuous drain current Pulsed drain current Avalanche energy, single pulse Symbol Conditions ID ID, pulse Tc=25oC Tc=100oC Tc=25oC E AS ID=8.3A Avalanche current, repetitive I AR limited by Tjmax MOSFET dv/dt ruggedness dv/dt VDS=480V, ID=9.5A, Tj=125oC Gate source voltage static VGS AC (f>1Hz) Power dissipation Ptot Tc=25oC Operating and storage temperature Tj, Tstg Mounting torque M 3 & 3.5 screws a When mounted on 1inch square 2oz copper clad FR-4 Value 9.5 5.9 28.5 340 5 50 ±20 ±30 95 -55 to +150 60 Unit A A mJ A V/ns V W oC Ncm SP-10N65-000-7 06/26/2014 1 ICE10N65 Parameter Symbol Conditions Thermal characteristics Thermal resistance, jun...