(PDF) ICE10N65 Datasheet PDF | Icemos





ICE10N65 Datasheet PDF

Part Number ICE10N65
Description N-Channel Enhancement Mode MOSFET
Manufacture Icemos
Total Page 9 Pages
PDF Download Download ICE10N65 Datasheet PDF

Features: Datasheet pdf ICE10N65 ICE10N65 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductiv e Switching (UIS) capability • High p eak current capability • Increased tr ansconductance performance • Optimize d design for high performance power sys tems HALOGEN FREE ID V(BR)DSS rDS(on) Qg Product Summary TA=25oC ID=250uA VGS=10V VDS=480V 9.5A 650V 0.35 41nC D Max Min Typ Typ G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION M OSFETS. THE MAJORITY OF THESE PATENTS H AVE 17 to 20 YEARS OF REMAINING LIFE. T HIS PORTFOLIO HAS GRANTED PATENTS ISSUE D IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Standard Metal Heatsink 1=Gat e, 2=Drain, 3=Source. Maximum ratings at Tj=25oC, unless otherwise specified Parameter Continuous drain current Pul sed drain current Avalanche energy, sin gle pulse Symbol Conditions ID ID, p ulse Tc=25oC Tc=100oC Tc=25oC E AS ID=8.3A Avalanche current, repetitive .

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ICE10N65 datasheet
ICE10N65
ICE10N65 N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
ID=250uA
VGS=10V
VDS=480V
9.5A
650V
0.35
41nC
D
Max
Min
Typ
Typ
G
S
T0220
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal
Heatsink
1=Gate, 2=Drain,
3=Source.
Maximum ratings at Tj=25oC, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Symbol
Conditions
ID
ID, pulse
Tc=25oC
Tc=100oC
Tc=25oC
E AS
ID=8.3A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=9.5A,
Tj=125oC
Gate source voltage
static
VGS
AC (f>1Hz)
Power dissipation
Ptot Tc=25oC
Operating and storage temperature
Tj, Tstg
Mounting torque
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
Value
9.5
5.9
28.5
340
5
50
±20
±30
95
-55 to +150
60
Unit
A
A
mJ
A
V/ns
V
W
oC
Ncm
SP-10N65-000-7
06/26/2014
1

ICE10N65 datasheet
ICE10N65
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction-
case a
RthJC
Thermal resistance, junction-
ambient a
RthJA
Soldering temperature, wave
soldering only allowed at leads
T sold
leaded
1.6mm (0.063in.) from
case for 10 s
Values
Unit
Min Typ Max
- - 1.3
oC/W
- - 62
- - 260 oC
Electrical characteristics at Tj=25oC, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS
Gate threshold voltage
VGS(th)
Zero gate voltage drain current IDSS
Gate source leakage current
Drain-source
on-state resistance
IGSS
rDS(on)
VGS=0 V, ID=250µA
VDS=VGS, ID=250µA
VDS=650V, VGS=0V,
Tj=25oC
VDS=650V, VGS=0V,
Tj=150oC
VGS=±20 V, VDS=0V
VGS=10V, ID=4.75A,
Tj=25oC
VGS=10V, ID=4.75A,
Tj=150oC
650
2.1
-
-
-
-
-
Gate resistance
RG f=1 MHZ, open drain
-
675 -
3 3.9
0.1 1
20 -
- 100
0.35 0.38
0.99 -
4.8 -
V
µA
nA
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Transconductance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
gfs
td(on)
tr
td(off)
tf
VGS=0 V, VDS=25 V,
f=1 MHz
- 1277 -
- 296 -
- 2-
VDS>2*ID*RDS, ID=4.75A
-
12 -
- 29 -
VDS=380V, VGS=10V, - 40 -
ID=9.5A, RG=4Ω
(External)
- 79 -
- 25 -
pF
S
ns
SP-10N65-000-7
06/26/2014
2





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