MTP3055VL

MTP3055VL June 2000 DISTRIBUTION GROUP* MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). Features 12 A, 60 V. RDS(ON) = 0.18 Ω @ VGS = 5 V Critical DC electrical parameters specified at elevated temperature. Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. D G D S TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous - Pulsed PD TJ, TSTG Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to- Case Rθ JA Thermal Resistance, Junction-to- Ambient (Note 1) S Ratings 60 ±15 12 42 48 0.32 -65 to +175 3.13 62.5 Package Outlines and Ordering Information Device Marking Device MTP3055VL MTP3055VL * Die and manufacturing source subject to change w...