H11A1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by H11A1/D GlobalOptoisolator™ H11A1* [CTR = 50% Min] *Motorola Preferred Device 6-Pin DIP Optoisolators Transistor Output The H11A1 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Current Transfer Ratios (CTR) 30% and 50% Economical Optoisolators for General Purpose/High Volume Applications To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications General Purpose Switching Circuits Interfacing and coupling systems of different potentials and impedances Monitor and Detection Circuits MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT TRANSISTOR Collector–Emitter Voltage Emitter–Collector Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) VISO PD TA Tstg TL 7500 250 2.94 – 55 to +100 – 55 to +150 260 Vac...