SKiM501GD063DM

SKiM501GD063DM SKiM® 5 Superfast NPT-IGBT Modules SKiM501GD063DM Features NPT-IGBT with positive temperature coefficient of VCEsat Short circuit, self limiting to 6 x IC DBC substrate: AlN Integrated temperature sensor Typical Applications* Resonant inverters up to 100kHz Inductive heating Electronic welders at fSW up to 20kHz Absolute Maximum Ratings Symbol Conditions IGBT VCES IC ICnom ICRM VGES Tj = 150 °C ICRM = 2xICnom Ts = 25 °C Ts = 70 °C tpsc VGE ≤ 20 V Tj = 125 °C VCES ≤ 600 V Tj Inverse diode IF Tj = 150 °C Ts = 25 °C Ts = 80 °C IFnom IFRM IFRM = 2xIFnom IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50 Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-s) IC = 600 A VGE = 15 V chiplevel Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15 V Tj = 25 °C Tj = 125 °C VGE=VCE, IC = 12 mA VGE = 0 V VCE = 600 V Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V...+ 20 V Tj = 25 °C VCC = 300 V IC = 600 A Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C per IGBT Values 600 515 392 600 1200 -20 ... 20 10 -40 ... 150 492 320 600 1200 4152 -40 ... 150 700 -40 ... 125 2500 Unit V A A A A V µs °C A A A A A °C A °C V min. typ. max. Unit 2 2.5 V 2.4 2.9 V 0.9 1 V 0.8 0.9 V 2.0 2.7 m 2.9 3.3 m 4.5 5.5 6.5 V 0.1 0.3 mA mA 27....